Semiconductor device package and method for forming the same
AssigneeAdvanced Semiconductor Engineering, Inc.
InventorsChun-Chin Huang, Yung I. Yeh, Che-Ming Hsu
Life of this patent
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Abstract
A semiconductor device package ready for assembly includes: a semiconductor substrate; a first under-bump-metallurgy (UBM) layer disposed on the semiconductor substrate; a first conductive pillar disposed on the first UBM layer; and a second conductive pillar disposed on the first conductive pillar. A material of the first conductive pillar is different from a material of the second conductive pillar, and the material of the second conductive pillar includes an antioxidant.
Claims17
A semiconductor device package ready for assembly, comprising:
- a semiconductor substrate;
- a first under-bump-metallurgy (UBM) layer disposed on the semiconductor substrate;
- a first conductive pillar disposed on the first UBM layer;
- and
- a second conductive pillar disposed on the first conductive pillar;
- wherein a material of the first conductive pillar is different from a material of the second conductive pillar, and the material of the second conductive pillar includes an antioxidant, and the first conductive pillar has a width, the second conductive pillar has a height, and the height is greater than the width by at least 0.65 times.
A semiconductor packaging assembly, comprising:
- a first semiconductor substrate;
- a first under-bump-metallurgy (UBM) layer disposed on the first semiconductor substrate;
- a first conductive pillar disposed on the first UBM layer;
- a second conductive pillar disposed on the first conductive pillar, wherein a material of the first conductive pillar is different from a material of the second conductive pillar;
- a second UBM layer disposed on the first semiconductor substrate;
- a third conductive pillar disposed on the second UBM layer;
- a fourth conductive pillar disposed on the third conductive pillar, wherein a material of the third conductive pillar is different from a material of the fourth conductive pillar;
- a second semiconductor substrate;
- a first conductive pad disposed on the second semiconductor substrate;
- and
- a second conductive pad disposed on the second semiconductor substrate;
- wherein the second conductive pillar is bonded to the first conductive pad, the fourth conductive pillar is bonded to the second conductive pad, and a volume of the material of the second conductive pillar is different from a volume of the material of the fourth conductive pillar, and the first conductive pillar and the third conductive pillar have substantially a same height, and the second conductive pillar and the fourth conductive pillar have different heights.
A method of forming a semiconductor device package ready for assembly, the method comprising:
- forming a first under-bump-metallurgy (UBM) layer on a semiconductor substrate;
- forming a first conductive pillar on the first UBM layer;
- and
- forming a second conductive pillar on the first conductive pillar;
- wherein a material of the first conductive pillar is different from a material of the second conductive pillar, the second conductive pillar is ready to be assembled with a first conductive pad, the first conductive pillar has a width, the second conductive pillar has a height, and the height is greater than the width by at least 0.65 times.
Dependencies are inferred from the claim text.