Reliable interconnect

A device comprising:

• an underlying device layer having an underlying device layer top surface;
• a contact region disposed on the underlying device layer top surface, wherein the contact region includes a contact pad having a contact pad top surface;
• a final passivation layer disposed on the underlying device layer top surface and the contact pad, wherein the final passivation layer includes a final passivation layer opening which defines an exposed portion of the contact pad top surface;
• a buffer layer disposed over the contact pad and completely within the final passivation layer opening, wherein the buffer layer is a single continuous non-metal layer which comprises a material different from the final passivation layer, and the buffer layer is separate and distinct from the final passivation layer;
• a barrier layer disposed over the contact pad, wherein the barrier layer covers a top surface of the buffer layer and extends over a portion of a passivation layer top surface surrounding the final passivation layer opening;
• and
• a wire bond directly coupled to the barrier layer, wherein a portion of the wire bond contacts a portion of the barrier layer overlapping the buffer layer.

A method for forming a device comprising:

• forming an underlying device layer having an underlying device layer top surface;
• forming a contact pad within a contact region disposed on the underlying device layer top surface, wherein the contact pad includes a contact pad top surface;
• forming a final passivation layer on the underlying device layer top surface and over the contact pad, wherein an opening is formed in the final passivation layer to expose a portion of the contact pad top surface;
• performing a deposition process to form a buffer layer over the contact pad and in the final passivation layer opening, wherein the buffer layer is a non-metal layer comprising a resilient material, and the buffer layer is a separate and distinct layer from the final passivation layer;
• forming a diffusion barrier layer, wherein the diffusion barrier layer covers a top surface of the buffer layer and extends over a portion of a passivation layer top surface surrounding the final passivation layer opening;
• and
• forming a wire bond directly coupled to the diffusion barrier layer, wherein a portion of the wire bond contacts a portion of the diffusion barrier layer overlapping the buffer layer.

A method for forming a device comprising:

• forming an underlying device layer having an underlying device layer top surface;
• forming a contact pad within a contact region disposed on the underlying device layer top surface, wherein the contact pad includes a contact pad top surface;
• forming a final passivation layer on the underlying device layer top surface and over the contact pad, wherein an opening is formed in the final passivation layer to expose a portion of the contact pad top surface;
• performing a deposition process to form a buffer layer in the final passivation layer opening, wherein the buffer layer partially overlaps the exposed portion of the contact pad top surface, the buffer layer includes a material different from a material of the final passivation layer, wherein the opening in the final passivation layer is formed prior to forming the buffer layer, and the buffer layer is formed completely within the opening of the final passivation layer;
• forming a conductive barrier layer over the contact pad, wherein the conductive barrier layer covers a major surface of the buffer layer and extends over a portion of a passivation layer top surface surrounding the final passivation layer opening;
• and
• forming a wire bond directly coupled to the conductive barrier layer, wherein a portion of the wire bond contacts a portion of the conductive barrier layer overlapping the buffer layer.