Structure of integrated circuitry and a method of forming a conductive via

A method of forming a conductive via, comprising:

• forming a structure comprising an elevationally-extending-conductive via comprising conductively-doped semiconductor material and a conductive line comprising metal material electrically coupled to and crossing above the conductive via, the conductive line and the conductive via respectively having opposing sides in a vertical cross-section;
• exposing the structure to an ammonium-hydroxide-containing fluid to form an oxide-containing first insulator material having k no greater than 4.0 laterally outward of the opposing sides of the conductively-doped semiconductor material of the conductive via selectively relative to the metal material of the opposing sides of the conductive line, the first insulator material being formed to a lateral thickness of at least 40 Angstroms in the vertical cross-section;
• forming a nitride-containing insulative material laterally outward of opposing sides of the first insulator material in the vertical cross-section;
• forming an oxide-containing-insulative material laterally outward of opposing sides of the nitride-containing-insulative material in the vertical cross-section;
• forming a nitride-containing second insulator material having k greater than 4.0 laterally outward of opposing sides of the oxide-containing-insulative material in the vertical cross-section;
• forming insulating material laterally outward of opposing sides of the oxide-containing-insulative material in the vertical cross-section above the second insulator material;
• and
• forming conductor material laterally outward of opposing sides of the second insulator material in the vertical cross-section.

A structure of integrated circuitry, comprising:

• an elevationally-extending-conductive via and a conductive line electrically coupled to and crossing above the conductive via, the conductive via having opposing sides in a vertical cross-section;
• first insulator material having k no greater than 4.0 laterally outward of the opposing sides of the conductive via, the first insulator material having a lateral thickness of at least 40 Angstroms along the opposing sides of the conductive via in the vertical cross-section;
• second insulator material having k greater than 4.0 laterally outward of opposing sides of the first insulator material in the vertical cross-section;
• and
• conductor material laterally outward of opposing sides of the second insulator material in the vertical cross-section, the conductor material on the opposing sides of the second insulator material having a respective bottom, the first insulator material having lateral thickness of at least 40 Angstroms and k no greater than 4.0 extending lower than the bottoms of the conductor material on the opposing sides of the second insulator material.

A structure of integrated circuitry, comprising:

• an elevationally-extending-conductive via and a conductive line electrically coupled to and crossing above the conductive via, the conductive via having opposing sides in a vertical cross-section;
• first insulator material having k no greater than 4.0 laterally outward of the opposing sides of the conductive via along at least a majority of elevational-length of the opposing sides of the conductive via downwardly from aside a top of the conductive via, the first insulator material having a lateral thickness of at least 40 Angstroms along the opposing sides of the conductive via;
• second insulator material having k greater than 4.0 laterally outward of opposing sides of the first insulator material in the vertical cross-section;
• and
• conductor material laterally outward of opposing sides of the second insulator material in the vertical cross-section.