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US 9,960,113 B2Granted
Method to fabricate a high performance capacitor in a back end of line (BEOL)
AssigneeGlobalfoundries Inc.
InventorsSunil Kumar Singh, Shesh Mani Pandey
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Abstract
A method can include applying a patterned mask over a semiconductor structure, the semiconductor structure having a dielectric layer, forming using the patterned mask a material formation trench intermediate first and second spaced apart metal formations formed in the dielectric layer, and disposing a dielectric material formation in the material formation trench.
Claims6
A semiconductor structure comprising:
- a dielectric layer;
- a first metal formation trench and a second metal formation trench;
- a first metal formation formed in the first metal formation trench;
- a second metal formation formed in the second metal formation trench;
- a material formation trench formed between the first metal formation and the second metal formation;
- and
- a dielectric material formation formed in the material formation trench.
4 more elements
Dependencies are inferred from the claim text.