Power module semiconductor device and inverter equipment, and fabrication method of the power module semiconductor device, and metallic mold

A power module semiconductor device comprising:

• an insulating substrate;
• a first pattern of a copper plate layer disposed on the insulating substrate;
• a semiconductor chip disposed on the first pattern;
• a power terminal electrically connected to the semiconductor chip;
• signal terminals wherein one of the signal terminals is electrically connected to the semiconductor chip;
• and
• a resin layer configured to cover the semiconductor chip and the insulating substrate, wherein
• the power terminal is disposed so as to be extended from a side surface of the resin layer in a horizontal direction with respect to a main surface of the insulating substrate to form a connection portion in the horizontal direction, and
• the signal terminals are disposed so as to be extended upward from a main surface of the resin layer in a vertical direction with respect to the main surface of the insulating and adjacent two opposite sides of the main surface of the resin layer, wherein
• the semiconductor chip is applied to a two-in-one type module, wherein
• a positive side power input terminal and a negative side power input terminal of the power terminal are disposed so as to be extended along in a parallel direction with the main surface of the resin layer from one side surface of the resin layer in the parallel direction, and
• an output terminal of the power terminal is disposed so as to be extended from another side surface of the resin layer in an opposite direction to the positive side power input terminal and the negative side power input terminal, along in the parallel direction of the main surface of the resin layer.

A power module semiconductor device comprising:

• an insulating substrate;
• a first pattern of a copper plate layer disposed on the insulating substrate;
• a semiconductor chip disposed on the first pattern;
• a power terminal and a signal terminal electrically connected to the semiconductor chip;
• a resin layer configured to cover the semiconductor chip and the insulating substrate;
• a second pattern of the copper plate layer;
• a pillar electrode disposed on the semiconductor chip;
• an upper surface plate electrode disposed on the pillar electrode;
• a drain terminal disposed on the first pattern;
• a pillar connection electrode disposed on the second pattern, pillar connection electrode connected to the upper surface plate electrode;
• and
• a source terminal connected to the pillar connection electrode, wherein
• the power terminal is disposed so as to be extended from a side surface of the resin layer in a horizontal direction with respect to a main surface of the insulating substrate to form a connection portion in the horizontal direction, and
• the signal terminal is disposed so as to be extended upward from a main surface of the resin layer in a vertical direction with respect to the main surface of the insulating substrate.

An inverter equipment, comprising:

• a plurality of power module semiconductor devices, wherein
• each of the plurality of power module semiconductor devices comprises
• a resin layer;
• and
• a straight wiring structure in which a first power terminal and a second power terminal are respectively exposed from mutually opposite side surfaces of the resin layer, wherein
• a signal terminal is extended from the resin layer in a vertical direction with respect to a main surface of the resin layer,
• the plurality of the power module semiconductor devices is arranged in parallel such that the first power terminal of each of the plurality of power module semiconductor devices is adjacent to the second power terminal of an adjacent power module semiconductor device;
• and
• the first power terminal of each of the plurality of power module semiconductor devices is connected via a bus electrode to the second power terminal of an adjacent power module semiconductor device, or a plurality of first power terminals of alternating ones of the plurality of the power module semiconductor devices are connected via a bus bar electrode.