Thermally conductive molding compound structure for heat dissipation in semiconductor packages
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChun-Hao Tseng, Ying-Hao Kuo, Kuo-Chung Yee
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Abstract
A method of forming a semiconductor package includes forming a thermal conductivity layer and attaching the thermal conductivity layer to a chip. The chip has a first surface and a second surface. The thermal conductivity layer is attached to the first surface of the chip. The thermal conductivity layer provides a path through which heat generated from the chip is dissipated to the ambient. A substrate is attached to the second surface of the chip. A molding compound is formed above the substrate to encapsulate the chip and the thermal conductivity layer.
Claims20
A semiconductor package, comprising:
- a chip attached to a first substrate;
- a thermal conductivity layer attached to the chip, wherein the thermal conductivity layer has interior sidewalls coupled to a lower interior surface of the thermal conductivity layer to define one or more recesses within an upper surface of the thermal conductivity layer facing away from the chip, and wherein the thermal conductivity layer provides a path through which heat generated from the chip is dissipated;
- and
- a molding compound formed above the first substrate, the molding compound encapsulating the chip and the thermal conductivity layer.
A semiconductor package, comprising:
- a first chip attached to a first substrate;
- a second chip attached to the first substrate;
- a thermal conductivity layer attached to the first chip, the second chip being free from having the thermal conductivity layer attached, wherein the thermal conductivity layer has interior sidewalls coupled to a lower interior surface of the thermal conductivity layer to define one or more recesses within an upper surface of the thermal conductivity layer facing away from the first chip;
- a molding compound over the first substrate, and surrounding the first chip, the second chip, and the thermal conductivity layer;
- and
- wherein the thermal conductivity layer contacts a thermal interface material (TIM) overlying the molding compound.
A semiconductor package, comprising:
- a first chip attached to a first substrate and having a first height with respect to a surface of the first substrate;
- a second chip attached to the first substrate and having a second height with respect to the surface of the first substrate;
- a third chip attached to the first substrate and having a third height with respect to the surface of the first substrate;
- a thermal conductivity layer attached to the first chip and to the second chip and having interior sidewalls coupled to lower interior surfaces of the thermal conductivity layer to define recesses within upper surfaces of the thermal conductivity layer disposed over and facing away from the first chip and the second chip, the third chip being free from having the thermal conductivity layer attached and the second chip having outermost sidewalls aligned along a first line with the thermal conductivity layer;
- a molding compound over the first substrate, the first chip, the second chip, the third chip, and the thermal conductivity layer;
- a thermal management device arranged over the molding compound, wherein the thermal management device has outermost sidewalls aligned along a second line with sidewalls of the molding compound and interior sidewalls defining one or more recesses within an upper surface of the thermal management device;
- and
- wherein the first height of the first chip and the third height of the third chip are different.
Dependencies are inferred from the claim text.