Semiconductor device
AssigneeFuji Electric Co., Ltd.
InventorYo Sakamoto
Life of this patent
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Abstract
A semiconductor device manufacturing method includes a step of preparing a semiconductor unit, having a first main surface including a heat releasing portion and a second main surface opposite to the first main surface, in which is mounted a semiconductor chip, a step of preparing a cooler having a flat surface, a step of applying a paste including metal nanoparticles to the first main surface of the semiconductor unit or the flat surface of the cooler, a step of bringing the first main surface of the semiconductor unit and the flat surface of the cooler into contact through the paste, and a step of applying a pressurizing force uniform in-plane to the second main surface of the semiconductor unit at the same time as raising the temperature of the paste, thereby sintering the paste and forming a junction layer.
Claims7
A semiconductor device, comprising:
- a semiconductor chip;
- a semiconductor unit having a first main surface including a heat releasing portion with a central portion and an outer portion outside the central portion, and a second main surface opposite to the first main surface, on which is mounted the semiconductor chip;
- a cooler having a flat surface, and positioned to face the first main surface of the semiconductor unit;
- and
- a junction layer formed of a sintered body of metal nanoparticles, and joining the first main surface of the semiconductor unit and the flat surface of the cooler, the junction layer having a peripheral portion thicker than a portion adjacent to the central portion of the first main surface and being arranged on an entirety of the first main surface outside the central portion facing the cooler,
- wherein the central portion of the first main surface directly contacts the cooler, and the junction layer joins the outer portion of the first main surface and the cooler.
Dependencies are inferred from the claim text.