Reflow interconnect using Ru
AssigneeInternational Business Machines Corporation
InventorsLawrence A. Clevenger, Su Chen Fan, Huai Huang, Koichi Motoyama, Wei Wang, Chih-Chao Yang
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Abstract
A method for forming conductive structures for a semiconductor device includes depositing a reflow liner on walls of trenches formed in a dielectric layer and depositing a reflow material on the reflow liner. The reflow material is reflowed to collect in a lower portion of the trenches. The depositing and the reflowing steps are repeated until the trenches are aggregately filled with the reflow material. The reflow material is planarized to form conductive structures in the trenches.
Claims15
A method for forming conductive structures for a semiconductor device, comprising:
- depositing a reflow liner on walls of trenches formed in a dielectric layer;
- depositing a reflow material on the reflow liner;
- reflowing the reflow material to collect in a lower portion of the trenches;
- repeating the depositing and the reflowing steps until the trenches are aggregately filled with the reflow material;
- and
- planarizing the reflow material to form conductive structures in the trenches.
A method for forming conductive structures for a semiconductor device, comprising:
- patterning a dielectric layer to form trenches for conductive structures in the dielectric layer;
- depositing a reflow liner on walls of the trenches formed in the dielectric layer;
- conformally depositing a reflow material on the reflow liner;
- reflowing the reflow material at a temperature below a melting point of the reflow material to collect in a lower portion of the trenches;
- repeating the conformally depositing and the reflowing steps until the trenches are aggregately filled with the reflow material;
- depositing an overburden layer of the reflow material over the aggregately filled trenches;
- annealing the reflow material in the overburden layer and the reflow material in the aggregately filled trenches;
- and
- planarizing the reflow material to form conductive structures in the trenches.
Dependencies are inferred from the claim text.