Surface machining method for single crystal SiC substrate, manufacturing method thereof, and grinding plate for surface machining single crystal SiC substrate
AssigneeShowa Denko K.K.
InventorsTakanori Kido, Tomohisa Kato
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Abstract
A surface machining method for a single crystal SiC substrate, including: a step of mounting a grinding plate which includes a soft pad and a hard pad sequentially attached onto a base metal having a flat surface, a step of generating an oxidation product by using the grinding plate, and a step of grinding the surface while removing the oxidation product, wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad.
Claims9
A grinding plate for surface machining a single crystal SiC substrate including a soft pad and a hard pad sequentially attached onto a base metal having a flat surface,
- wherein abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad, and
- wherein the hard pad is segmented.
A grinder for surface machining a single crystal SiC substrate, which comprises:
- a grinding plate mounted in the grinder, wherein the grinding plate comprises a soft pad and a hard pad sequentially attached onto a base metal having a flat surface;
- and abrasive grains made of at least one metallic oxide that is softer than single crystal SiC and has a bandgap are fixed to the surface of the hard pad,
- a table for a substance to be machined to which a single crystal SiC substrate is fixed, and
- a rotating unit, by which the abrasive grains of the grinding plate is contacted with a surface to be machined of a substance to be machined, while the grinding plate is rotated together with the table, and
- wherein the hard pad is segmented.
Dependencies are inferred from the claim text.