Process of forming semiconductor device

A method of forming a semiconductor device on a wafer using a plasma process, the semiconductor device providing device areas each having a conductive region, scribed areas each having a conductive region, and a peripheral area having a conductive region, the peripheral area being provided in a periphery of the wafer, the process comprising steps of:

• implanting ions between the device areas and the scribed areas to form isolation regions that electrically isolates the conductive region in the device areas from the conductive region in the scribed areas, the isolation regions surrounding the conductive regions in the device areas, the conductive regions in the scribed areas surrounding the isolation regions;
• forming a metal film on a back surface, a side, and the peripheral area of the wafer in a top surface thereof opposite to the back surface, the conductive region in the peripheral area being continuous to the conductive regions in the scribed areas;
• Forming an insulating film on a whole of the top surface of the wafer;
• and
• Selectively etching the insulating film by a plasma process to expose the conductive regions in the device areas and the conductive regions in the scribed areas.