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US 9,960,042 B2Granted
Carbon dopant gas and co-flow for implant beam and source life performance improvement
AssigneeEntegris, Inc.
InventorsOleg Byl, Edward A. Sturm, Ying Tang, Sharad N. Yedave, Joseph D. Sweeney, Steven G. Sergi, Barry Lewis Chambers
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Abstract
Ion implantation processes and systems are described, in which carbon dopant source materials are utilized to effect carbon doping. Various gas mixtures are described, including a carbon dopant source material, as well as co-flow combinations of gases for such carbon doping. Provision of in situ cleaning agents in the carbon dopant source material is described, as well as specific combinations of carbon dopant source gases, hydride gases, fluoride gases, noble gases, oxide gases and other gases.
Claims18
An ion implantation method, comprising:
- flowing a carbon dopant source composition to an ion implanter configured for carbon doping of a substrate;
- and
- operating the ion implanter to generate carbon dopant species from the carbon dopant source composition and to implant the carbon dopant species in the substrate, wherein the carbon dopant source composition is co-flowed to the ion implanter with at least one co-flow gas or is flowed to the ion implanter in mixture with at least one additional gas, wherein the at least one co-flow gas or at least one additional gas comprises gas selected from the group consisting of:
- GeH4, SiH4, XeF2, BF3, SF6, GeF4, SiF4, NF3, N2F4, HF, WF6, MoF6, PF3, PF5, and B2F4,
- wherein said operating generates a beam current, and the at least one co-flow gas or the at least one additional gas increases the beam current in a mixture of the carbon dopant source and the at least one co-flow gas or the at least one additional gas, as compared to the carbon dopant source without the at least one co-flow gas or the at least one additional gas.
2 more elements
Dependencies are inferred from the claim text.