Method of forming pattern and method of manufacturing integrated circuit device by using the same

A method of forming a pattern, the method comprising:

• forming a first level pattern layer on a feature layer on a substrate, wherein the first level pattern layer has a plurality of first line patterns extending parallel to one another in a first direction and a plurality of first space burying patterns extending parallel to one another in the first direction, the first line patterns arranged alternately with the first space burying patterns;
• forming a second direction pattern space extending intermittently or continuously along a second direction intersecting the first direction in the first level pattern layer by removing a portion of the plurality of first space burying patterns from a second line pattern region extending along the second direction;
• forming a second burying film filling the second direction pattern space to thereby form a network structure pattern as a combination of the plurality of first line patterns and the second burying film;
• removing a remaining portion of the plurality of first space burying patterns to expose a portion of the feature layer through the network structure pattern;
• and
• etching the feature layer with the network structure pattern as an etch mask to thereby form a feature pattern having a plurality of holes.