Laser assisted SiC growth on silicon
AssigneeBoard of Trustees of Michigan State University
InventorsPremjeet Chahal, Tim Hogan, Amanpreet Kaur
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Abstract
A method for forming a compound on a substrate is provided. The method includes depositing a composition onto a surface of a substrate; illuminating the composition and the substrate with pulsed energy; melting the substrate and decomposing the composition simultaneously; and forming a compound on the substrate. A first component of the compound is derived from the substrate and a second component of the compound is derived from the composition.
Claims18
A method for forming a compound on a substrate, the method comprising:
- depositing a composition comprising a carbon-based polymer onto a surface of the substrate;
- illuminating the composition and the substrate with pulsed energy;
- melting the substrate and decomposing the composition simultaneously;
- and
- forming the compound on the substrate,
- wherein a first component of the compound is derived from the substrate and a second component of the compound is derived from the composition.
A method for forming SiC on a silicon (Si) substrate, the method comprising:
- depositing polymethyl methacrylate (PMMA) on a surface of the Si substrate by spin coating;
- illuminating the PMMA and Si with an excimer laser that generates from about 1 mJ to about 1000 mJ of energy with pulses of from about 20 ns to about 1000 ns;
- moving the excimer laser relative to the Si substrate and PMMA;
- and
- forming SiC on the Si substrate.
Dependencies are inferred from the claim text.