Methods of forming thin films and methods of fabricating integrated circuit devices using the same
AssigneesSamsung Electronics Co., Ltd., Adeka Corporation
InventorsJae wan Chang, Youn soo Kim, Tsubasa Shiratori
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Abstract
Provided herein are methods of forming thin films. In some embodiments, to form a thin film, a precursor adsorption layer including an organic ligand is formed by supplying a precursor including a metal or silicon central atom, and the organic ligand onto a lower structure. An intermediate result layer is formed by supplying a non-oxidant onto the precursor adsorption layer. In forming the intermediate result layer, the organic ligand included in the precursor adsorption layer is substituted with a substituent. An oxide film including the central atom is formed from the intermediate result layer by supplying an oxidant onto the intermediate result layer.
Claims19
A method of forming a thin film, comprising:
- forming a precursor adsorption layer comprising an organic ligand by supplying a precursor onto a lower structure, wherein the precursor comprises the organic ligand and a metal or silicon central atom;
- forming an intermediate result layer by supplying a non-oxidant onto the precursor adsorption layer, wherein the organic ligand of the precursor adsorption layer is substituted with a substituent;
- and
- forming an oxide film comprising the central atom from the precursor adsorption layer by supplying an oxidant onto the intermediate result layer,
- wherein the non-oxidant comprises a nitrogen-containing material, and the substituent is amidogen (—NH2).
A method of fabricating an integrated circuit device, comprising:
- forming a lower structure having a step height on a substrate;
- and
- forming an oxide film on the lower structure,
- wherein the forming of the oxide film comprises:
- forming a precursor adsorption layer on an upper surface and sidewalls of the lower structure, the precursor adsorption layer comprising metal or silicon central atoms and organic ligands bonded to the central atoms;
- substituting at least a portion of the organic ligands with a substituent by supplying a non-oxidant onto the precursor adsorption layer;
- and
- forming the oxide film that comprises the central atoms by supplying an oxidant onto the precursor adsorption layer comprising the substituent, thereby forming the oxide film,
- wherein in the step of forming the precursor adsorption layer, the organic ligands comprise an amido ligand, and in the step of substituting at least the portion of the organic ligands with the substituent, the non-oxidant is a nitrogen-containing material.
A method of forming a thin film, comprising:
- supplying a precursor onto a lower structure to form a precursor adsorption layer, wherein the precursor comprises a metal or silicon central atom and an organic ligand;
- supplying a non-oxidant onto the precursor adsorption layer to form an intermediate result layer, wherein supplying the non-oxidant onto the precursor adsorption layer comprises substituting the organic ligand of the precursor adsorption layer with a substituent;
- and
- supplying an oxidant onto the intermediate result layer to form the thin film, the thin film comprising the metal or silicon central atom from the precursor adsorption layer,
- wherein the non-oxidant comprises a nitrogen-containing material, and the substituent is amidogen (—NH2).
Dependencies are inferred from the claim text.