Microplasma generation devices and associated systems and methods
AssigneeMassachusetts Institute of Technology
InventorLuis Fernando Velásquez-García
Life of this patent
Estimating the term…
Abstract
Microplasma generators and associated arrays and methods are described herein. Certain embodiments relate to a microplasma generator in which an elongated semiconductor structure can control electronic current supplied to a microplasma cavity. In certain cases, the microplasma generator can be configured to generate a microplasma when a voltage is applied across the elongated semiconductor structure. Some embodiments include particular spatial arrangements between the electrode(s), the elongated semiconductor structure, and/or the microplasma cavity.
Claims23
A microplasma generator, comprising:
- an elongated semiconductor structure comprising a longitudinal axis, a first end, and a second end;
- and
- a microplasma cavity spatially defined by a structure comprising the elongated semiconductor structure and an electrode,
- wherein:
- the microplasma generator is configured to generate a microplasma when a voltage is applied across the elongated semiconductor structure along the longitudinal axis of the structure, and
- the second end of the elongated semiconductor structure is located between the first end of the elongated semiconductor structure and the microplasma cavity.
An array of microplasma generators, comprising:
- a plurality of elongated semiconductor structures comprising longitudinal axes;
- a plurality of microplasma cavities spatially defined by structures comprising the elongated semiconductor structures and first electrodes;
- and
- a plurality of gate electrodes adjacent to the elongated semiconductor structures and outside the microplasma cavities,
- wherein the array is configured such that, when a voltage above a threshold value is applied to the array, microplasma is generated within the microplasma cavities, and when a voltage is applied to the gate electrode, a saturation current of the elongated semiconductor structure is altered.
A method of generating microplasma, comprising:
- applying a voltage along a longitudinal axis of an elongated semiconductor structure such that microplasma is generated within a microplasma cavity spatially defined by a structure comprising the elongated semiconductor structure and an electrode, wherein:
- the elongated semiconductor structure comprises a first end and a second end;
- and
- the second end of the elongated semiconductor structure is located between the first end of the elongated semiconductor structure and the microplasma cavity.
A microplasma generator, comprising:
- an elongated semiconductor structure comprising a longitudinal axis;
- a microplasma cavity spatially defined by a structure comprising the elongated semiconductor structure and a first electrode;
- and
- a second electrode, the second electrode being between the elongated semiconductor structure and the microplasma cavity,
- wherein the microplasma generator is configured to generate a microplasma when a voltage is applied across the elongated semiconductor structure along the longitudinal axis of the structure.
A method of generating microplasma, comprising:
- applying a voltage along a longitudinal axis of an elongated semiconductor structure such that microplasma is generated within a microplasma cavity spatially defined by a structure comprising the elongated semiconductor structure and a first electrode, wherein the structure further comprises a second electrode between the elongated semiconductor structure and the microplasma cavity.
Dependencies are inferred from the claim text.