Reduction of dielectric losses through use of organoclay in semiconductor or insulator compositions

A structure comprising:

• a semiconducting layer comprising a first material that comprises a first polymeric resin and a conductive filler, wherein the first polymeric resin comprises (i) at least one propylene copolymer which is a copolymer of propylene and 12 wt % ethylene, the propylene copolymer comprising lossy species and the propylene copolymer having a peak melting point of 80 C and a melt flow rate of 25 g/10 minutes, (ii) an ethylene/vinyl acetate copolymer, and (iii) from 1 wt % to 3 wt % organoclay, based on the total weight of the polymeric resin in the first material;
• and,
• an insulating layer comprising consisting of a second material that consisting of a second polymeric resin and optionally up to 3 wt % of an organoclay based on the total weight of the polymeric resin in the second material, wherein the second polymeric resin consists of a polyethylene crosslinked with dicumyl peroxide,
• wherein the semiconducting layer and the insulating layer are at least partially in physical contact with each other, and
• the ratio of AC dielectric losses of a comparative structure to the structure is greater than 1.5, after aging at 140° C. for one week, when measured at a temperature of 130° C. and a frequency of 60 Hz, the comparative structure being identical to the structure except that the comparative structure lacks organoclay.