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US 9,959,938 B2Granted
Semiconductor memory device outputting status fail signal and operating method thereof
AssigneeSK hynix Inc.
InventorChan Woo Yang
Life of this patent
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Abstract
In a method of operating a semiconductor memory device, a program command is received, and a program operation is performed to increase threshold voltages of memory cells to be programmed by applying a program pulse to a word line. Page data is read from the selected memory cells by applying a verification voltage to the word line, and it is determined whether the number of memory cells corresponding to a program pass is greater than a determined number, based on the page data. A status fail signal is output based on the determination result.
Claims9
A method of operating a semiconductor memory device, the method comprising:
- performing a program operation comprising a plurality of program loops, wherein each of the plurality of program loops includes a program voltage application operation and a program verification operation;
- and
- outputting, if a result of the program verification operation for a first program loop among the plurality of program loops is a pass, a status fail signal for the program operation,
- wherein the program voltage application operation comprises applying a program voltage pulse to a selected word line, and
- wherein the program verification operation comprises:
- reading data from memory cells connected to the selected word line using a verify voltage;
- determining whether a number of memory cells with threshold voltages reaching a target voltage is greater than a critical value;
- and
- determining the result of the program verification operation as the pass if the number of memory cells with the threshold voltages reaching the target voltage is greater than the critical value.
6 more elements
A method of operating a semiconductor memory device, the method comprising:
- performing a program voltage application operation to increase threshold voltages of memory cells connected to a selected word line;
- performing a program verification operation to determine whether the threshold voltages of memory cells reach a target voltage level;
- and
- outputting a status fail signal when a result of the program verification operation is a pass,
- wherein the program voltage application operation comprises applying a program voltage pulse to the selected word line, and
- wherein the program verification operation comprises:
- reading data from memory cells connected to the selected word line using a verify voltage;
- determining whether a number of memory cells with threshold voltages reaching a target voltage is greater than a critical value;
- and
- determining the result of the program verification operation as the pass if the number of memory cells with the threshold voltages reaching the target voltage is greater than the critical value.
7 more elements
A semiconductor memory device, comprising:
- a memory cell array including a plurality of memory cells;
- and
- a peripheral circuit configured to perform a program operation including a plurality of program loops on selected memory cells among the plurality of memory cells, wherein each of the plurality of program loops includes a program voltage application operation and a program verification operation;
- and
- a control logic configured to control the peripheral circuit to output a status fail signal if a result of the program verification operation for a first program loop among the plurality of program loops is a pass,
- wherein the control logic controls the peripheral circuit to apply a program voltage pulse to the selected memory cells during the program voltage application operation,
- wherein the control logic controls the peripheral circuit to read data from the selected memory cells by applying a verify voltage during the program verification operation, and
- wherein the control logic controls the peripheral circuit to determine whether a number of memory cells with threshold voltages reaching a target voltage is greater than a critical value, and determines the result of the program verification operation as the pass if the number of memory cells with the threshold voltages reaching the target voltage is greater than the critical value.
5 more elements
Dependencies are inferred from the claim text.