Multi-step voltage for forming resistive access memory (RRAM) cell filament
AssigneeSilicon Storage Technology, Inc.
InventorsFeng Zhou, Xian Liu, Nhan Do, Hieu Van Tran, Hung Quoc Nguyen, Mark Reiten, Zhixian Chen, Wang Xinpeng, Guo-Qiang Lo
Life of this patent
Estimating the term…
Abstract
A memory device and method comprising a metal oxide material disposed between and in electrical contact with first and second conductive electrodes, and a voltage source configured to apply a plurality of voltage pulses spaced apart in time across the first and second electrodes. For each one of the voltage pulses, an amplitude of the voltage increases during the voltage pulse.
Claims32
A method of forming a conductive filament in metal oxide material disposed between and in electrical contact with first and second conductive electrodes, the method comprising:
- applying a plurality of voltage pulses spaced apart in time across the first and second electrodes;
- wherein for each one of the voltage pulses, an amplitude of the voltage increases during the voltage pulse.
A memory device comprising:
- a metal oxide material disposed between and in electrical contact with first and second conductive electrodes;
- a voltage source configured to apply a plurality of voltage pulses spaced apart in time across the first and second electrodes;
- wherein for each one of the voltage pulses, an amplitude of the voltage increases during the voltage pulse.
Dependencies are inferred from the claim text.