Apparatus and methods for memory using in-plane polarization

A random access memory device, comprising:

• a ferroelectric semiconductor layer having an in-plane polarization component switchable between a first direction and a second direction opposite to the first direction, the ferroelectric semiconductor layer having a thickness substantially equal to or less than 10 nm and a length of about 10 nm to about 50 nm;
• an insulator layer disposed on a first surface of the ferroelectric semiconductor layer;
• a writing electrode, disposed on a first side of the insulator layer, to apply a writing voltage to the ferroelectric semiconductor layer, the writing voltage switching the in-plane polarization component between the first direction and the second direction;
• a ground electrode disposed on a second side, opposite the first side, of the insulator layer;
• and
• a graphene layer, disposed on a second surface, opposite the first surface, of the ferroelectric semiconductor layer, to apply a reading voltage, with respect to the ground electrode, to the ferroelectric semiconductor layer to measure a tunneling current substantially perpendicular to the first surface of the ferroelectric semiconductor layer.