Magnetoresistive devices and methods for manufacturing magnetoresistive devices

A method for manufacturing a magnetoresistive device,

• the method comprising:
• depositing a magnetoresistive stack on a substrate;
• depositing an etch-stop layer (ESL) on the magnetoresistive stack;
• depositing a mask layer on the ESL;
• depositing a photoresist layer on the mask layer, the photoresist layer exposing a portion of the mask layer;
• performing a first etching process to etch the exposed portion of the mask layer to expose a portion of the ESL;
• removing the photoresist layer from the mask layer following the first etching process;
• and
• performing a second etching process to etch the exposed portion of the ESL, a portion of the magnetoresistive stack, and a portion of the substrate.

A method for manufacturing a magnetoresistive device,

• the method comprising:
• performing a first etching process to etch a portion of a mask layer to expose a portion of an etch-stop layer (ESL);
• and
• performing a second etching process to etch the exposed portion of the ESL, a portion of a magnetoresistive stack underlying the ESL, and a portion of a substrate underlying the magnetoresistive stack.