Embedded spin transfer torque memory for cellular neural network based processing unit
AssigneeGyrfalcon Technology Inc.
InventorsChyu-Jiuh Torng, Qi Dong, Lin Yang
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AssigneeGyrfalcon Technology Inc.
InventorsChyu-Jiuh Torng, Qi Dong, Lin Yang
Estimating the term…
An integrated circuit processor having a processing unit that includes a logical circuit with multiple transistors and a top metal landing pad, and an embedded STT memory. The STT memory includes a dielectric layer formed on the top metal landing pad, an adhesion and topography planarization (ATP) layer formed on the dielectric layer, and an MTJ film layer disposed on the ATP layer. The memory may also include bit lines formed on the MTJ film layer. The ATP layer may have multiple layers such as a top layer and a bottom layer. The top layer may act as an etch stop for etching the MTJ film layer on the top. The ATP layer may have a total thickness of 500 A to 4000 A. The bit lines can be configured to send data to the logic circuit of the processing unit to perform one or more convolution neural network computations.
An integrated circuit processor having embedded spin transfer torque memory, comprising:
An embedded STT memory, comprising:
An integrated circuit processor having embedded spin transfer torque memory, comprising:
Dependencies are inferred from the claim text.