Storage device, operation method of storage device and method of accessing storage device
AssigneeSamsung Electronics Co., Ltd.
InventorsGoeun Jung, Kyungryun Kim, Sangyong Yoon, Seung-Cheol Han
Life of this patent
Estimating the term…
Abstract
A method of operating a storage device includes a nonvolatile memory device, a controller configured to control the nonvolatile memory device and a temperature sensor configured to measure a temperature of the nonvolatile memory device. The method includes calculating an average sensing temperature of a sensing temperature measured by the temperature sensor for a period of time, and periodically calculating an elapsed time of data after the data is programmed in the nonvolatile memory device based upon the average sensing temperature.
Claims15
A method of operating a storage device including a nonvolatile memory device, a controller configured to control the nonvolatile memory device, and a temperature sensor configured to measure temperature of the nonvolatile memory device, the method comprising:
- calculating, by the controller, an average sensing temperature of temperatures measured by the temperature sensor over a period of time;
- periodically calculating, by the controller, an elapsed time of data after the data is programmed in the nonvolatile memory device based upon the average sensing temperature, the elapsed time in the form of an elapsed time stamp,
- wherein periodically calculating the elapsed time comprises determining a weighted elapsed time which depends on the average sensing temperature and a first elapsed time most recently calculated, and calculating a new elapsed time as the elapsed time by adding the determined weighted elapsed time and the first elapsed time;
- adjusting, by the controller, a read voltage level in accordance with the elapsed time stamp;
- and
- reading, by the controller, the data from the nonvolatile memory device using the adjusted read voltage level.
A storage device comprising:
- a nonvolatile memory device;
- a memory controller configured to control the nonvolatile memory device;
- and
- a temperature sensor configured to measure temperature of the nonvolatile memory device,
- wherein the memory controller is configured to calculate an average sensing temperature using temperatures measured by the temperature sensor over a period of time, adjust a read voltage level according to the average sensing temperature and an elapsed time of data after the data is programmed in the nonvolatile memory device, and read the data from the nonvolatile memory device using the adjusted read voltage level,
- wherein the temperature sensor is configured to measure the temperature of the nonvolatile memory device each time the temperature is changed and to transfer the measured temperature to the memory controller, and
- wherein the memory controller is further configured to select a weighted elapsed time which depends on the average sensing temperature and a range of the elapsed time of data after the data is programmed in the nonvolatile memory device.
A method of accessing a storage device including a nonvolatile memory device, a controller, and a temperature sensor configured to measure temperature of the nonvolatile memory device, the method comprising:
- periodically calculating, by the controller, an average sensing temperature using temperatures measured by the temperature over a period of time;
- periodically renewing, by the controller, an elapsed time of data after the data is programmed in the nonvolatile memory device, the renewed elapsed time in a form of an elapsed time stamp,
- wherein the renewed elapsed time is determined according to a weighted elapsed time which depends on a change of the average sensing temperature and a length of a most recently renewed elapsed time;
- adjusting, by the controller, a read voltage level using the elapsed time stamp;
- and
- reading, by the controller, the data from the nonvolatile memory device by applying the adjusted read voltage level.
A storage device comprising:
- a nonvolatile memory device;
- a memory controller configured to control the nonvolatile memory device;
- and
- a temperature sensor configured to measure temperature of the nonvolatile memory device,
- wherein the memory controller is configured to
- calculate an average sensing temperature using temperatures measured by the temperature sensor over a period of time,
- periodically calculate an elapsed time of data after the data is programmed in the nonvolatile memory device by determining a weighted elapsed time which depends on the average sensing temperature and a first elapsed time most recently calculated, and adding the determined weighted elapsed time and the first elapsed time, the calculated elapsed time in a form of an elapsed time stamp,
- adjust a read voltage level in accordance with the elapsed time stamp, and
- read the data using the adjusted read voltage level.
Dependencies are inferred from the claim text.