Method of metrology, inspection apparatus, lithographic system and device manufacturing method

A method of measuring a target comprising a plurality of periodic structures, the method comprising:

• simultaneously measuring each periodic structure of the target thereby obtaining, for each periodic structure, a measured value of radiation scattered by the periodic structure;
• and
• using a correction applicable to a location of the periodic structure for which the measured value of radiation corresponds, to correct each measured value of radiation scattered by the periodic structure so as to compensate for the effects of measurement field location dependence in the measured values;
• wherein each correction is determined using the method comprising,
• performing a first measurement and a second measurement of at least one of the periodic structures;
• and
• determining a correction from the first and second measurements;
• wherein:
• the first measurement is performed with the target being in a normal measurement location with respect to a measurement field;
• the second measurement is performed with the at least one periodic structure in a shifted location with respect to the measurement field, the shifted location comprising a location of another periodic structure when the target is in the normal measurement location with respect to the measurement field;
• and
• the correction is a correction parameter being operable to correct for the measurement field location dependence in the measured values by an adjustment of the measured values.

A method of measuring asymmetry in a target comprising a plurality of periodic structures formed by a lithographic process on a substrate, the method comprising:

• a first measurement step comprising forming and detecting a first image of each of the periodic structures while illuminating the target with measurement radiation, the first image being formed using a first selected part of radiation diffracted by each periodic structure, thereby obtaining a first measured value of radiation scattered by each periodic structure;
• a second measurement step comprising forming and detecting a second image of each of the periodic structures while illuminating the target with measurement radiation, the second image being formed using a second selected part of radiation diffracted by each periodic structure, thereby obtaining a second measured value of radiation scattered by each periodic structure, the second selected part of radiation being symmetrically opposite to the first selected part of radiation, in a diffraction spectrum of the periodic structure;
• and
• calculating a measurement of asymmetry in each periodic structure based on the applicable first measured value of radiation scattered by the periodic structure and the second measured value of radiation scattered by the periodic structure,
• wherein in the calculating the measurement of asymmetry, a correction to compensate for the effects of measurement field location dependence in the first and second measured values of radiation scattered by the periodic structure is performed using a correction determined using the method comprising,
• performing a first measurement and a second measurement of at least one of the periodic structures;
• and
• determining a correction from the first and second measurements;
• wherein:
• the first measurement is performed with the target being in a normal measurement location with respect to a measurement field;
• the second measurement is performed with the at least one periodic structure in a shifted location with respect to the measurement field, the shifted location comprising a location of another of said periodic structure when the target is in the normal measurement location with respect to the measurement field;
• and
• the correction is a correction parameter being operable to correct for the measurement field location dependence in the first and second measured values by an adjustment of the first and second measured values.

A method of measuring a target parameter of one or more periodic structures comprised within a target, the method comprising:

• forming and detecting an image of each periodic structure while illuminating the target with measurement radiation, the image being formed using radiation scattered by each periodic structure, thereby obtaining measured values of radiation scattered by each periodic structure;
• calculating a measurement of the target parameter for each periodic structure from the corresponding image;
• wherein in the step of calculating the measurement of the target parameter, a correction to compensate for effects of measurement field location dependence in measured values of radiation scattered by the periodic structure is performed using a correction determined using a method comprising,
• performing a first measurement and a second measurement of at least one of the periodic structures;
• and
• determining a correction from the first and second measurements;
• wherein:
• the first measurement is performed with the target being in a normal measurement location with respect to a measurement field;
• the second measurement is performed with the at least one periodic structure in a shifted location with respect to the measurement field, the shifted location comprising a location of another periodic structure when the target is in the normal measurement location with respect to the measurement field;
• and
• the correction is a correction parameter being operable to correct for the measurement field location dependence in the measured values by an adjustment of the measured values.

A lithographic system comprising:

• a lithographic apparatus comprising:
• an illumination optical system arranged to illuminate a pattern;
• a projection optical system arranged to project an image of the pattern onto a substrate;
• and
• a metrology apparatus configured to perform a method comprising:
• performing a first measurement and a second measurement of at least one periodic structure of a target;
• and
• determining a correction from the first and second measurements;
• wherein:
• the first measurement is performed with the target being in a normal measurement location with respect to a measurement field;
• and
• the second measurement is performed with the at least one periodic structure in a shifted location with respect to the measurement field, the shifted location comprising a location of another periodic structure when the target is in the normal measurement location with respect to the measurement field;
• and
• the correction is a correction parameter being operable to correct for measurement field location dependence in measured values by an adjustment of the measured values,
• wherein the lithographic apparatus is arranged to use a determined parameter value calculated by the metrology apparatus in applying the pattern to further substrates,
• wherein the determined parameter value is determined using intensity measurements made using the metrology apparatus and to which the correction has been applied.

A computer program comprising processor readable instructions which, when run on a suitable processor controlled apparatus, cause the processor controlled apparatus to perform operations comprising:

• performing a first measurement and a second measurement of at least one periodic structure of a target;
• and
• determining a correction from the first and second measurements;
• wherein:
• the first measurement is performed with the target being in a normal measurement location with respect to a measurement field;
• and
• the second measurement is performed with the at least one periodic structure in a shifted location with respect to the measurement field, the shifted location comprising a location of another of said periodic structure when the target is in the normal measurement location with respect to the measurement field;
• and
• the correction is a correction parameter being operable to correct for measurement field location dependence in measured values by an adjustment of the measured values.

A method of manufacturing devices wherein a device pattern is applied to a series of substrates using a lithographic process, the method comprising:

• performing a first measurement and a second measurement of at least one periodic structure of a target;
• determining a correction from the first and second measurements;
• wherein:
• the first measurement is performed with the target being in a normal measurement location with respect to a measurement field;
• and
• the second measurement is performed with the at least one periodic structure in a shifted location with respect to the measurement field, the shifted location comprising a location of another periodic structures when the target is in the normal measurement location with respect to the measurement field;
• the correction is a correction parameter being operable to correct for measurement field location dependence in measured values by an adjustment of the measured values;
• applying the correction to intensity measurements, and using the corrected intensity measurements to monitor a lithographic process parameter;
• and
• controlling the lithographic process for later substrates in accordance with the lithographic process parameter.