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AssigneeASML Netherlands B.V.
InventorsErik Roelof Loopstra, Jan Bernard Plechelmus Van Schoot, Timotheus Franciscus Sengers, Christiaan Louis Valentin, Antonius Johannes Josephus Van Dijsseldonk
Estimating the term…
A method of exposing a patterned area on a substrate using an EUV lithographic apparatus having a demagnification of about 5× and a numerical aperture of about 0.4 is disclosed. The method comprises exposing a first portion of the patterned area on the substrate using a first exposure, the first portion dimensions are significantly less than the dimensions of a conventional exposure, and exposing one or more additional portions of the patterned area on the substrate using one or more additional exposures, the additional portions having dimensions which are significantly less than the dimensions of a conventional exposure. The method further comprises repeating the above to expose a second patterned area on the substrate, the second patterned area being provided with the same pattern as the first patterned area, wherein a distance between center points of the first and second patterned areas corresponds with a dimension of a conventional exposure.
A method of forming a patterned area on a substrate, the method comprising:
An EUV lithographic apparatus configured to form a patterned area on a substrate, the EUV lithographic apparatus comprising:
Dependencies are inferred from the claim text.