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US 9,958,781 B2Granted
Method for film formation, and pattern-forming method
AssigneeJsr Corporation
InventorsYuushi Matsumura, Goji Wakamatsu, Naoya Nosaka, Tsubasa Abe, Yoshio Takimoto
Life of this patent
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Abstract
A method comprises applying a composition on a substrate to form a coating film on the substrate. The coating film is heated in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a film on the substrate. The composition comprises a compound comprising an aromatic ring. The oxygen concentration in the atmosphere during the heating of the coating film is preferably no greater than 0.1% by volume. The temperature in the atmosphere during the heating of the coating film is preferably 500° C. or higher and 600° C. or lower.
Claims12
A pattern-forming method comprising:
- applying a composition on an upper face side of a substrate to form a coating film on the upper face side of the substrate;
- heating the coating film in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a resist underlayer film on the upper face side of the substrate,
- forming a resist pattern on an upper face side of the resist underlayer film;
- and
- forming a pattern by a plurality of times of etching operations using the resist pattern as a mask such that the substrate has a pattern,
- wherein the composition comprises an aromatic ring-containing compound having a molecular weight of no less than 600 and no greater than 3,000,
- the aromatic ring-containing compound comprises a partial structure represented by formula (5), a partial structure represented by formula (6), or both thereof:
- wherein:
- in the formula (5), R101 to R104 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group having 1 to 20 carbon atoms;
- a11 and a12 are each independently an integer of 0 to 9;
- b11 and b12 are each independently an integer of 0 to 4, wherein in a case in which R101 to R104 are each present in a plurality of number, the plurality of R101s are identical or different, the plurality of R102s are identical or different, the plurality of R103s are identical or different, and the plurality of R104s are identical or different;
- n11 and n12 are each independently an integer of 0 to 2;
- k11 and k12 are each independently an integer of 0 to 9, wherein the sum of a11 and k11 is no greater than 9, and the sum of a12 and k12 is no greater than 9;
- and *11 denotes a binding site to another moiety, and
- in the formula (6), X1 and X2 each independently represent a substituted or unsubstituted cyclic structure having 4 to 10 ring atoms together with a spiro carbon atom and carbon atoms of an adjacent aromatic ring;
- R131 and R132 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group;
- a1 and a2 are each independently an integer of 0 to 8, wherein in a case in which R131 and R132 are each present in a plurality of number, the plurality of R131s are identical or different, and the plurality of R132s are identical or different;
- n1 and n2 are each independently an integer of 0 to 2;
- k1 and k2 are each independently an integer of 0 to 8, wherein the sum of a1 and k1 is no greater than 8, and the sum of a2 and k2 is no greater than 8;
- and *13 denotes a binding site to another moiety,
- the aromatic ring-containing compound comprises an intermolecular bond-forming group which is a carbon-carbon triple bond-containing group.
18 more elements
A pattern-forming method comprising:
- applying a composition on an upper face side of a substrate to form a coating film on the upper face side of the substrate;
- heating the coating film in an atmosphere in which an oxygen concentration is less than 1% by volume and a temperature is higher than 450° C. and 800° C. or lower, to form a resist underlayer film on the upper face side of the substrate,
- forming a resist pattern on an upper face side of the resist underlayer film;
- and
- forming a pattern by a plurality of times of etching operations using the resist pattern as a mask such that the substrate has a pattern,
- wherein the composition comprises an aromatic ring-containing compound having a molecular weight of no less than 600 and no greater than 3,000,
- the aromatic ring-containing compound comprises a partial structure represented by formula (5), a partial structure represented by formula (6), or both thereof:
- wherein:
- in the formula (5), R101 to R104 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group having 1 to 20 carbon atoms;
- a11 and a12 are each independently an integer of 0 to 9;
- b11 and b12 are each independently an integer of 0 to 4, wherein in a case in which R101 to R104 are each present in a plurality of number, the plurality of R101s are identical or different, the plurality of R102s are identical or different, the plurality of R103s are identical or different, and the plurality of R104s are identical or different;
- n11 and n12 are each independently an integer of 0 to 2;
- k11 and k12 are each independently an integer of 0 to 9, wherein the sum of a11 and k11 is no greater than 9, and the sum of a12 and k12 is no greater than 9;
- and *11 denotes a binding site to another moiety, and
- in the formula (6), X1 and X2 each independently represent a substituted or unsubstituted cyclic structure having 4 to 10 ring atoms together with a spiro carbon atom and carbon atoms of an adjacent aromatic ring;
- R131 and R132 each independently represent a halogen atom, a hydroxy group, a nitro group or a monovalent organic group;
- a1 and a2 are each independently an integer of 0 to 8, wherein in a case in which R131 and R132 are each present in a plurality of number, the plurality of R131s are identical or different, and the plurality of R132s are identical or different;
- n1 and n2 are each independently an integer of 0 to 2;
- k1 and k2 are each independently an integer of 0 to 8, wherein the sum of a1 and k1 is no greater than 8, and the sum of a2 and k2 is no greater than 8;
- and *13 denotes a binding site to another moiety,
- the aromatic ring-containing compound comprises an intermolecular bond-forming group which is at least one selected from the group consisting of a (meth)acryloyl group, a substituted or unsubstituted vinylphenyl group, a group represented by formula (7-1), a substituted or unsubstituted ethynyl group, a substituted or unsubstituted propargyl group, a group represented by formula (7-2), and a group represented by formula (7-3):
- wherein:
- in the above formula (7-1), R105, R106 and R107 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms,
- in the above formula (7-2), R108 and R109 each independently represent a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms;
- q7 is 1 or 2, wherein in a case in which q7 is 2, a plurality of R108s are identical or different, and
- in the above formula (7-3), R110 represents a hydrogen atom or a monovalent hydrocarbon group having 1 to 20 carbon atoms.
23 more elements
Dependencies are inferred from the claim text.