Semiconductor device having multiple insulating films of varying thickness

A display device comprising:

• an insulating substrate;
• a first insulating film disposed on the insulating substrate;
• a second insulating film disposed on the first insulating film;
• a third insulating film disposed on the second insulating film;
• a fourth insulating film disposed on the third insulating film;
• a fifth insulating film disposed on the fourth insulating film;
• a sixth insulating film disposed on the fifth insulating film;
• a color filter layer disposed on the sixth insulating film;
• a semiconductor layer disposed between the second insulating film and the third insulating film;
• a gate electrode disposed between the third insulating film and the fourth insulating film;
• and
• a source electrode disposed between the fifth insulating film and the sixth insulating film and electrically connected to the semiconductor layer, wherein
• the first, fourth, and sixth insulating films are formed of a silicon nitride,
• the second, third, and fifth insulating films are formed of a silicon oxide,
• the color filter layer includes a first color filter layer and a second color filter layer,
• a thickness of the sixth insulating film in an area opposed to the first color filter layer is different from a thickness of the sixth insulating film in an area opposed to the second color filter layer,
• the first color filter layer is red, and the second color filter layer is blue,
• the fourth insulating film is 490±10 nm in thickness,
• the fifth insulating film is 370±10 nm in thickness,
• the sixth insulating film in an area opposed to the red color filter layer is 300±10 nm in thickness, and
• the sixth insulating film in an area opposed to the blue color filter layer is 110±10, 220±10, or 330±10 nm in thickness.