Method for evaluating defect region of semiconductor substrate

A method for evaluating a defect region of a semiconductor substrate based on capacity-voltage (C-V) characteristics of a metal-oxide-semiconductor (MOS) structure formed on the semiconductor substrate, the method comprising:

• determining a relationship between the defect region and a flat band voltage or a fixed charge density by using a semiconductor substrate having a known defect region, under a heat treatment condition and a C-V characteristic evaluating condition identical to conditions for evaluating the defect region of the semiconductor substrate to be evaluated;
• and
• determining the flat band voltage or the fixed charge density of the semiconductor substrate to be evaluated from C-V characteristics of the MOS structure formed on the semiconductor substrate to be evaluated, and identifying the defect region of the semiconductor substrate to be evaluated based on the relationship between the defect region and the flat band voltage or the fixed charge density previously determined, whereby the defect region of the semiconductor substrate is evaluated.