US 9,958,442 B2Granted

Sensors incorporating antibodies and methods of making and using the same

AssigneeDuke University

InventorsR. Michael Angelo, April S. Brown, Scott Wolter, William V. Lampert

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Abstract

A sensor comprising an electronic circuit electrically coupled to a type III-V semiconductor material, for example indium arsenide (InAs) and an antibody contacting the type III-V semiconductor material. The sensor produces measurable N changes in the electrical properties of the semiconductor upon antibody-antigen binding events. Electrical properties measurable by the electronic device may include resistivity, capacitance, impedance, and inductance. A method of detecting an antigen using sensors of the invention. A method of detecting a reaction of an analyte to a stimulus using sensors of the invention. Sensor arrays comprising multiple sensors of the invention.

Claims16

Dependent claims

A sensor comprising:

a type III-V semiconductor material having a first edge and a second edge,
an antibody contacting the type III-V semiconductor material, and
an electronic circuit electrically coupled to the type III-V semiconductor material,
the first edge of the type III-V semiconductor material configured for applying current to said first edge and the second edge configured for measuring voltage at said second edge to determine a first value of an electrical property of the semiconductor material, wherein the electronic circuit measures the electrical properly of the type III-V semiconductor material,
such that when an antigen binds to the antibody, the electrical property has a second value different from the first value.

2 more elements

Dependencies are inferred from the claim text.