Epitaxial wafer and method for manufacturing same

An epitaxial wafer comprising:

• a silicon carbide film having a first main surface;
• a silicon carbide substrate having a second main surface,
• the silicon carbide film being formed on the second main surface,
• the second main surface having an off angle of not more than ±4° relative to a (0001) plane,
• an off direction of the off angle being in a range of not more than ±5° relative to a <11-20> direction or in a range of not more than ±5° relative to a <01-10> direction,
• a groove portion being formed in the first main surface, the groove portion extending in the off direction along the first main surface, a width of the groove portion in the off direction being twice or more as large as a width of the groove portion in a direction perpendicular to the off direction, the maximum depth of the entirety of the groove portion from the first main surface being not more than 10 nm, wherein
• the groove portion includes a first groove portion and a second groove portion connected to the first groove portion,
• the first groove portion is formed in one end portion of the groove portion in the off direction,
• the second groove portion extends in the off direction from the first groove portion to the other end portion opposite to the one end portion, and a depth of the second groove portion from the first main surface is smaller than the maximum depth of the entirety of the first groove portion,
• the first groove portion has a triangular shape in cross-section, and
• the second groove portion comprises a bottom surface that is substantially parallel to the first main surface.