Method for manufacturing silicon carbide semiconductor device
AssigneeMitsubishi Electric Corporation
InventorsAkihito Ohno, Yoichiro Mitani, Takahiro Yamamoto, Nobuyuki Tomita, Kenichi Hamano
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Abstract
A method for manufacturing a silicon carbide semiconductor device includes: preparing a silicon carbide single crystal substrate having a flatness with an average roughness of 0.2 nm or less; gas-etching a surface of the silicon carbide single crystal substrate under an atmosphere of a reducing gas; and forming a silicon carbide layer on the gas-etched surface of the silicon carbide single crystal substrate, wherein an etching rate of the gas etching is made in a range of 0.5 μm/hour or faster to 2.0 μm/hour or slower.
Claims4
A method for manufacturing a silicon carbide semiconductor device comprising:
- preparing a silicon carbide single crystal substrate having a flatness with an average roughness of 0.2 nm or less;
- gas-etching a surface of the silicon carbide single crystal substrate under an atmosphere of a reducing gas;
- and
- forming a silicon carbide layer on the gas-etched surface of the silicon carbide single crystal substrate,
- wherein an etching rate of the gas etching is made in a range of 0.5 μm/hour or faster to 2.0 μm/hour or slower, such that said etching rate reduces the occurrence of triangle defects, and the silicon carbide layer has a triangle defect density of 0.1/cm2 or less.
Dependencies are inferred from the claim text.