US 9,957,469 B2 · Copper corrosion inhibition system

Abstract

There are provided metal corrosion inhibition cleaning compositions, methods and system for copper (Cu), tungsten (W), titanium (Ti), tantalum (Ta), cobalt (Co), and aluminum (Al). The metal corrosion inhibition cleaning compositions provide corrosion inhibition effects by use a combination of two chemicals—at least one multi-functional amine that has more than one amino groups; and at least one multi-functional acid that has more than one carboxylate groups. The metal corrosion inhibition cleaning compositions are effective for cleaning the residues deriving from high density plasma etching followed by ashing with oxygen containing plasmas; and slurry particles and residues remaining after chemical mechanical polishing (CMP).

Claims18

Dependent claims

A metal corrosion inhibition cleaning composition consisting of:

1) 0.1 wt. % to 5 wt. % of at least one multi-functional acid;
2) 0.1 wt. % to 25 wt. % of at least one multi-functional amine;
3) fluoride source;
4) up to 70 wt. % liquid carrier;
and
5) base;
wherein
the multi-functional amine is an amine or a polyamine that has more than one amino groups in one molecule;
the multi-functional acid is an acid or a multi-acid that has more than one carboxylate groups in one molecule selected from the group consisting of malic acid, phthalic acid;
citric acid, trimellitic acid, pyromellitic acid, and combinations thereof;
and
the liquid carrier is selected from the group consisting of organic solvent, water, and combinations thereof.

9 more elements

A method of cleaning a semiconductor wafer comprising:

a) providing the semiconductor wafer having at least a surface containing at least one metal and residues;
b) providing a metal corrosion inhibition cleaning composition consisting of;
1) 0.1 wt. % to 5 wt. % of at least one multi-functional acid;
2) 0.1 wt. % to 25 wt. % of at least one multi-functional amine;
3) up to 70 wt. % liquid carrier;
4) fluoride source;
and
5) base;
wherein
the multi-functional amine is an amine or a polyamine that has more than one amino groups in one molecule;
the multi-functional acid is an acid or a multi-acid that has more than one carboxylate groups in one molecule selected from the group consisting of malic acid, phthalic acid;
citric acid, trimellitic acid, pyromellitic acid, and combinations thereof;
and
the liquid carrier is selected from the group consisting of organic solvent, water, and combinations thereof;
c) contacting the semiconductor wafer with the metal corrosion inhibition cleaning composition;
and
d) cleaning the residues;
wherein at least a portion of the surface having the residues is in contact with the metal corrosion inhibition composition.

15 more elements

A semiconductor wafer cleaning system comprising:

a semiconductor wafer having at least a surface containing at least one metal and residues;
a metal corrosion inhibition cleaning composition consisting of:
1) 0.1 wt. % to 5 wt. % of at least one multi-functional acid;
2) 0.1 wt. % to 25 wt. % of at least one multi-functional amine;
3) fluoride source;
4) up to 70 wt. % liquid carrier;
and
5) base;
wherein
the multi-functional amine is an amine or a polyamine that has more than one amino groups in one molecule;
the multi-functional acid is an acid or a multi-acid that has more than one carboxylate groups in one molecule selected from the group consisting of malic acid, phthalic acid;
citric acid, trimellitic acid, pyromellitic acid, and combinations thereof;
and
the liquid carrier is selected from the group consisting of organic solvent, water, and combinations thereof;
wherein
at least a portion of the surface having the residues is in contact with the cleaning composition.

13 more elements

Dependencies are inferred from the claim text.

Copper corrosion inhibition system

Life of this patent

Copper corrosion inhibition system

Life of this patent

Abstract

Claims18