Anistropic semiconductor nanoparticles
AssigneeYissum Research Development Company of the Hebrew University of Jerusalem
InventorsUri Banin, Adiel Zimran, Itai Lieberman, Amit Sitt
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Abstract
The present invention provides seeded rod (SR) nanostructure systems including an elongated structure embedded with a seed structure being a core/shell structure or a single-material rod element. The SR systems disclosed herein are suitable for use in a variety of electronic and optical devices.
Claims17
A seeded rod (SR) nanostructure comprising an elongated structure embedding a single seed structure, said single seed structure being selected from the group consisting of an elongated shaped core/shell structure, an elongated shaped core/multishell structure, and a single-material rod element,
- wherein:
- the thickness of the elongated structure material embedding said seed structure along one axis (tk1, tk2) is at least three times as large as the thickness (tk3, tk4) along the other axis;
- one or both of tk3 and tk4 has a thickness between 0.8 and 1.5 nm;
- and
- at least one material of elongated structure and the seed structure is independently selected from the group consisting of a semiconductor material, an insulator material, and a metal oxide material,
- wherein
- the elongated structure has a long axis and a short axis, the long axis being orthogonal to the short axis and having a length that is longer than a length of the short axis;
- and
- the elongated structure has a first thickness (tk1), a second thickness (tk2), a third thickness (tk3), and a fourth thickness (tk4);
- tk1 is a thickness of the elongated structure from a first outer surface of the elongated structure to an outer surface of the seed structure along the long axis;
- tk2 is a thickness of the elongated structure from a second outer surface of the elongated structure, which is opposite to the first outer surface, to an outer surface of the seed structure along the long axis;
- tk3 is a thickness of the elongated structure from a third outer surface of the elongated structure to an outer surface of the seed structure along the short axis;
- tk4 is a thickness of the elongated structure from a fourth outer surface of the elongated structure, which is opposite to the third outer surface, to an outer surface of the seed structure along the short axis;
- one or both of tk1 and tk2 is at least three times as large as one or both of tk3 and tk4;
- and
- wherein the peak structure in the XRD spectrum of the seed structure is different from the peak structure in the XRD structure of the elongated structure embedding a single seed structure.
Dependencies are inferred from the claim text.