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US 9,957,165 B2Granted
Precursors suitable for high temperature atomic layer deposition of silicon-containing films
AssigneeApplied Materials, Inc.
InventorMark Saly
Life of this patent
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Abstract
Provided are methods of depositing silicon-containing films utilizing certain precursors at temperatures of 400° C. or higher. Certain methods comprise exposing a substrate surface to a silicon precursor and another precursor to achieve various films. Examples of silicon-containing films which can be deposited include SiN, SiC, SiO2, SiCN, etc.
Claims13
A method of depositing a film comprising silicon, the method comprising:
- a. contacting a substrate surface with a first precursor having a structure represented by (II):
- wherein each R is independently C1-6 linear or C1-5 branched alkyl, C1-6 linear or C1-5 branched alkenyl, C1-6 linear or C1-5 branched fluorinated alkyl or amino group;
- and
- b. contacting the substrate surface with at least one oxygen, nitrogen and/or carbon precursor to deposit a film comprising silicon,
- wherein the substrate surface has a temperature of about 400° C. or greater.
2 more elements
A method of depositing a film comprising silicon, the method comprising:
- a. contacting a substrate surface with a first precursor having the formula RnSiX4-n, wherein each X is independently a halide, azide, amino, hydrazide, cyanide or isocyanide group, each R is independently linear C1-6 alkyl or branched C1-4 alkyl, and n is at least 2;
- and
- b. contacting the substrate surface with at least one oxygen, nitrogen and/or carbon precursor to deposit a film comprising silicon,
- wherein the substrate surface has a temperature of about 400° C. or greater.
1 more element
Dependencies are inferred from the claim text.