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US 9,957,159 B2Granted
System and method for an ovenized silicon platform using Si/SiO2 hybrid supports
OwnerWeibin Zhu, Navid Yazdiinventors
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Abstract
The present invention generally relates to an ovenized platform and a fabrication process thereof. Specifically, the invention relates to an ovenized hybrid Si/SiO2 platform compatible with typical CMOS and MEMS fabrication processes and methods of its manufacture. Embodiments of the invention may include support arms, CMOS circuitry, temperature sensors, IMUs, and/or heaters among other elements.
Claims20
An ovenized silicon platform comprising:
- at least one silicon layer;
- at least one silicon oxide layer;
- a hybrid Si/SiO2 platform support structure,
- wherein said support structure is formed by depositing silicon oxide within trenches formed by a deep reactive ion etching of a silicon layer to create alternating layers of silicon and silicon oxide configured to thermally isolate the platform from temperature fluctuations;
- and
- at least one thin-film electrical interconnect displaced on the top surface of said platform.
3 more elements
A method for fabricating an ovenized silicon platform, said method comprising the steps of:
- deep-reactive-ion-etching trenches into a layer of silicon on one side of said platform;
- forming a recess on a side of the platform opposite to that of said trenches;
- depositing a layer of oxide onto a top layer of the platform to refill said trenches
- thereby having a patterned platform support structure of alternating layers of silicon and silicon oxide that provides thermal isolation for the platform;
- attaching conductive traces onto a surface of the platform;
- and
- releasing said support structure.
4 more elements
Dependencies are inferred from the claim text.