Fabrication of self assembling nano-structures
AssigneeUniversity of Houtson System
InventorsGemunu H. Gunaratne, Girish Nathan, Donald J. Kouri, Pradeep Sharma, Fazle Hussain, Feng Shi
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Abstract
A new approach to fabricating regularly patterned nano-scale structures, by self assembly of the structures is disclosed, where a pattern of nano-lines are deposited on a substrate and nano-structures are grown by self assembly in regions between the lines to form regular or patterned nano-scale structures, which are ideally suited for the construction nano-scale materials, nano-scale electronic devices and other nano-scale objects, apparatuses or devices. The invention also relates to methods of making and using same.
Claims16
An article comprising:
- a substrate including:
- a plurality of first lines deposited on a surface of the substrate,
- a plurality of first regions defined between the plurality of first lines, and
- a plurality of first self-assembled, nano-structures formed within or on the plurality of first regions,
- wherein a line spacing, a line thickness, and a line height are adjusted to produce a well ordered or substantially defect free pattern of the plurality of first nano-structures having at least 90% pattern uniformity
- a plurality of second lines deposited on the surface of the substrate,
- a plurality of second regions defined between the plurality of second lines, and
- a plurality of second self-assembled, nano-structures formed in the second regions,
- wherein the plurality of second nano-structures form a second pattern that is either partially ordered or partially defect free having a pattern uniformity between about 10% and about 90%, or not well ordered or not substantially defect free, and
- wherein the plurality of first lines and plurality of second lines are formed using line forming agents selected from the group consisting of Group VIII metals or metal ions to form conductive lines;
- metals to form semiconductor lines;
- materials to form insulator lines;
- and mixtures or combinations thereof and where the plurality of lines and plurality of second lines are composed of the same or different line forming agents.
An article comprising:
- a substrate including:
- a plurality of first lines deposited on a surface of the substrate,
- a plurality of first regions defined between the plurality of first lines, and
- a plurality of first self-assembled, nano-structures formed in the first regions,
- wherein the first lines have a line spacing, a line thickness, and a line height adjusted to produce a well ordered or substantially defect free pattern of first nano-structures having at least 90% pattern uniformity, and
- a plurality of second lines deposited on the surface of the substrate,
- a plurality of second regions defined between the plurality of second lines, and
- a plurality of second self-assembled, nano-structures formed in the second regions,
- wherein the plurality of second nano-structures form a second pattern that is either partially ordered or partially defect free having a pattern uniformity between about 10% and about 90%, or not well ordered or not substantially defect free.
An article comprising:
- a substrate including:
- a plurality of first lines deposited on a surface of the substrate,
- a plurality of first regions defined between the plurality of first lines, and
- a plurality of first self-assembled, nano-structures formed in the first regions,
- wherein the first lines have a line spacing, a line thickness, and a line height adjusted to produce a well ordered or substantially defect free pattern of first nano-structures having at least 90% pattern uniformity,
- a plurality of second lines deposited on the surface of the substrate,
- a plurality of second regions defined between the plurality of second lines, and
- a plurality of second self-assembled, nano-structures formed in the second regions,
- wherein the plurality of second nano-structures form a second pattern that is either partially ordered or partially defect free having a pattern uniformity between about 10% and about 90%, or not well ordered or not substantially defect free, and
- a plurality of third lines deposited on the surface of the substrate,
- a plurality of third regions defined between the plurality of third lines, and
- a plurality of third self-assembled, nano-structures formed in the third regions,
- wherein the plurality of third nano-structures form a third pattern that is either not well ordered or not substantially defect free.
An article comprising:
- a substrate including:
- two arrays of uniform parallel stripes oriented 60° apart defining regions between the arrays of stripes,
- a plurality of self-assembled, nano-structures formed in the regions,
- wherein the nano-structures form a single domain having long-range positional and orientational order and wherein the stripes have a width on the order of 20 nm and wherein a nearest neighbor distance between nano-structures is between 5 nm and 10 nm.
Dependencies are inferred from the claim text.