Light emitting device and method of manufacturing the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsHirokazu Yamagata, Shunpei Yamazaki, Toru Takayama
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Abstract
A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of the interlayer insulating film on the TFT for surface modification.
Claims8
A light-emitting device comprising:
- a base insulating film over a substrate, the base insulating film comprising a silicon oxide film, a silicon nitride film, or a silicon oxynitride film;
- a semiconductor layer over the base insulating film, the semiconductor layer comprising crystalline silicon film;
- a gate insulating film over the semiconductor layer, the gate insulating film comprising silicon;
- a gate electrode over the gate insulating film;
- an interlayer insulating film over the gate insulating film and the gate electrode;
- a first electrode over the interlayer insulating film, the first electrode comprising indium tin oxide;
- a bank covering an edge of the first electrode;
- a first organic compound layer over the first electrode and the bank;
- and
- a second electrode over the first organic compound layer, the second electrode comprising magnesium and silver,
- wherein the first organic compound layer comprises a first region having a first thickness and a second region having a second thickness, and
- wherein the first thickness is larger than the second thickness.
Dependencies are inferred from the claim text.