Method for growing silicon carbide crystal

A method for growing a crystal of silicon carbide by a solution method using a crucible formed of SiC as a main component, as a container for a Si—C solution, comprising

• adding, to the Si—C solution, a metal element M (M is at least one metal element selected from at least one of a first group consisting of La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho and Lu, a second group consisting of Ti, V, Cr, Mn, Fe, Co, Ni and Cu and a third group consisting of Al, Ga, Ge, Sn, Pb and Zn);
• heating the crucible to elute Si and C, which are derived from a main component SiC of the crucible, from a high-temperature surface region of the crucible in contact with the Si—C solution, into the Si—C solution, thereby suppressing precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si—C solution;
• and
• moving down a SiC seed crystal closer to the Si—C solution from an upper portion of the crucible and bringing the seed crystal into contact with the Si—C solution to grow a SiC single crystal on the SiC seed crystal, and wherein
• the heating is carried out to form a temperature distribution where the temperature of the Si—C solution in the crucible increases from the top to the bottom, and at the bottom portion of the crucible has the highest temperature.