Method for growing silicon carbide crystal

A method for growing a silicon carbide crystal by a solution method using a crucible formed of SiC as a main component, as a container for a Si—C solution, comprising

• heating the crucible to elute Si and C, which are derived from a main component SiC of the crucible, from a high-temperature surface region of the crucible in contact with the Si—C solution, into the Si—C solution so that precipitation of a SiC polycrystal on a surface of the crucible in contact with the Si—C solution is suppressed by elution of the Si and C into the Si—C solution;
• and
• moving down a SiC seed crystal closer to the Si—C solution from an upper portion of the crucible and bringing the seed crystal into contact with the Si—C solution to grow a SiC single crystal on the SiC seed crystal, and wherein
• the heating is carried out to form a temperature distribution where the temperature of the Si—C solution in the crucible increases from the top to the bottom, and at the bottom portion of the crucible has the highest temperature.