Chamber with flow-through source
AssigneeApplied Materials, Inc.
InventorDmitry Lubomirsky
Life of this patent
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Abstract
Described processing chambers may include a chamber housing at least partially defining an interior region of a semiconductor processing chamber. The chamber may include a showerhead positioned within the chamber housing, and the showerhead may at least partially divide the interior region into a remote region and a processing region in which a substrate can be contained. The chamber may also include an inductively coupled plasma source positioned between the showerhead and the processing region. The inductively coupled plasma source may include a conductive material within a dielectric material.
Claims19
A semiconductor processing chamber comprising:
- a chamber housing at least partially defining an interior region of the semiconductor processing chamber;
- a showerhead positioned within the chamber housing, wherein the showerhead at least partially divides the interior region into a remote region and a processing region in which a substrate can be contained;
- and
- an inductively coupled plasma source positioned between the showerhead and the processing region, wherein the inductively coupled plasma source comprises a conductive material within a dielectric material.
An inductively coupled plasma source comprising:
- a first plate defining at least a portion of a first channel and at least a portion of a second channel within the first plate, wherein the first plate comprises a dielectric material;
- a first conductive material seated within the at least a portion of the first channel;
- and
- a second conductive material seated within the at least a portion of the second channel, wherein each of the first conductive material and the second conductive material is characterized by a spiral or coil configuration, and wherein each of the first conductive material and the second conductive material is coupled with an RF source.
A semiconductor processing chamber comprising:
- a chamber housing at least partially defining an interior region of the semiconductor processing chamber, wherein the chamber housing includes a lid assembly including an inlet for receiving precursors into the semiconductor processing chamber;
- a pedestal within the interior region of the semiconductor processing chamber;
- a showerhead positioned within the chamber housing, wherein the showerhead is positioned between the lid assembly and the pedestal;
- an inductively coupled plasma source positioned between the showerhead and the pedestal, wherein the inductively coupled plasma source comprises a conductive material within a dielectric material.
Dependencies are inferred from the claim text.