Enhancing integrated circuit density with active atomic reservoir

An integrated circuit (IC), comprising:

• first and second conductors in one layer of the IC, wherein the first conductor is oriented along a first direction, the second conductor is oriented along a second direction generally perpendicular to the first direction, and the second conductor physically joins the first conductor;
• a third conductor in another layer of the IC, oriented along the second direction, and above the second conductor;
• a first via connecting the first and third conductors;
• a second via connecting the second and third conductors;
• and
• an n-type active region under the one layer of the IC and electrically connected to the second conductor,
• wherein the first and third conductors are power rails of the IC and are configured to be biased to a first voltage.

An integrated circuit (IC), comprising:

• first and second conductors in one layer of the IC, wherein the first conductor is oriented along a first direction, the second conductor is oriented along a second direction generally perpendicular to the first direction, and a portion of the second conductor is joined to the first conductor;
• a third conductor in another layer of the IC, oriented along the second direction, and directly above the second conductor;
• a first via connecting the first and third conductors;
• a second via connecting the second and third conductors;
• an n-type active region under the one layer of the IC and electrically connected to the second conductor;
• and
• a fourth conductor in the one layer of the IC and oriented along the first direction,
• wherein:
• the second conductor is spaced from the fourth conductor;
• the first, third, and fourth conductors are power rails of the IC;
• the first and third conductors are configured to be biased to a first voltage;
• and
• the fourth conductor is configured to be biased to a second voltage different from the first voltage.