Systems and methods for laser splitting and device layer transfer

A method to split and separate a layer of desired thickness of crystalline semiconductor material containing optical, photovoltaic, electronic, microelectro-mechanical system (MEMS), or optoelectronic devices, from a thicker donor wafer, comprising:

• using laser irradiation on a side opposite to one containing the devices, the laser irradiation using a focused laser beam scanned across the donor wafer and forming a two-dimensional separation layer of micro-crack spots;
• and
• using a fluid spray to facilitate releasing the crystalline semiconductor material along the separation layer.