Circular printed memory system and method having robustness to orientation
AssigneeXerox Corporation
InventorJeffrey M. Fowler
Life of this patent
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Abstract
A circular memory device includes a plurality of bottom electrodes, a plurality of top electrodes, a ferroelectric layer, and a plurality of memory storage locations within the ferroelectric layer at a crossover point of each of the bottom electrodes and each top electrode. Contact pads of the bottom electrodes and top electrodes may include a perimeter that defines an annular sector that allows a memory operation to be performed on the circular memory device across a range of rotational positions. In an example implementation, the memory operation may be performed on the circular memory device regardless of the rotational orientation of the circular memory device relative to a reader.
Claims20
A memory device, comprising:
- a plurality of bottom electrodes comprising a plurality of bottom electrode contact pads and a plurality of bottom electrode extended members, wherein:
- each of the plurality of bottom electrode contact pads is in electrical communication with one of the bottom electrode extended members;
- each of the plurality of bottom electrode contact pads comprises a first arc-shaped midline bisecting the bottom electrode contact pad and positioned at a first radius from a center of the memory device;
- and
- a perimeter of each bottom electrode contact pad defines an annular sector bisected by the first arc-shaped midline;
- a plurality of top electrodes comprising a plurality of top electrode contact pads and a plurality of top electrode extended members, wherein:
- each of the plurality of top electrode contact pads is in electrical communication with one of the top electrode extended members;
- each of the plurality of top electrode contact pads comprises a second arc-shaped midline bisecting the top electrode and positioned at a second radius from the center of the memory device, wherein the first radius is different from the second radius;
- and
- a ferroelectric layer positioned between the plurality of bottom electrode extended members and the plurality of top electrode extended members.
A memory system, comprising:
- a circular memory device, comprising:
- a plurality of bottom electrodes comprising a plurality of bottom electrode contact pads and a plurality of bottom electrode extended members, wherein:
- each of the plurality of bottom electrode contact pads is in electrical communication with one of the bottom electrode extended members;
- each of the plurality of bottom electrode contact pads comprises a first arc-shaped midline bisecting the bottom electrode contact pad and positioned at a first radius from a center of the circular memory device;
- and
- a perimeter of each bottom electrode contact pad defines an annular sector bisected by the first arc-shaped midline;
- a plurality of top electrodes comprising a plurality of top electrode contact pads and a plurality of top electrode extended members, wherein:
- each of the plurality of top electrode contact pads is in electrical communication with one of the top electrode extended members;
- each of the plurality of top electrode contact pads comprises a second arc-shaped midline bisecting the top electrode and positioned at a second radius from the center of the circular memory device, wherein the first radius is different from the second radius;
- and
- a ferroelectric layer positioned between the plurality of bottom electrode extended members and the plurality of top electrode extended members;
- and
- a reader configured to perform a memory operation on the circular memory device, the reader comprising a plurality of probes configured to electrically couple to the plurality of bottom electrode contact pads and the plurality of top electrode contact pads.
A method for performing a memory operation on a circular memory device, comprising:
- placing a reader in physical contact with the circular memory device;
- detecting whether every primary probe of a plurality of primary probes of the reader is electrically coupled to one electrode of a plurality of electrodes of the circular memory device;
- responsive to every primary probe of the plurality of primary probes being electrically coupled to one electrode of the plurality of electrodes, performing the memory operation on the circular memory device using the plurality of primary probes;
- responsive to every primary probe of the plurality of primary probes not being electrically coupled to one electrode of the plurality of electrodes, detecting whether every secondary probe of a plurality of secondary probes of the reader is electrically coupled to one electrode of the plurality of electrodes of the circular memory device;
- and
- responsive to every secondary probe of the plurality of secondary probes being electrically coupled to one electrode of the plurality of electrodes, performing the memory operation on the circular memory device using the plurality of secondary probes.
Dependencies are inferred from the claim text.