US 9,928,126 B1 · Recovery from cross-temperature read failures by programming neighbor word lines

Abstract

A memory system includes an interface and storage circuitry. The interface is configured to communicate with memory cells that store data. The storage circuitry is configured to program a data unit to a first group of the memory cells, to read the data unit from the first group using at least a read threshold to produce a first readout, and in response to detecting that reading the data unit has failed because the read threshold has fallen outside a supported range of read thresholds, due to a temperature difference between a time of programming the first group and a time of reading the first group, to program a second group of the memory cells. The circuitry is further configured to re-read the data unit from the first group using the at least read threshold to produce a second readout, and to recover the data unit from the second readout.

Claims18

Dependent claims

A memory system, comprising:

an interface, configured to communicate with a plurality of memory cells that store data by setting the memory cells to analog voltages representative of respective storage values;
and
storage circuitry configured to:
program a data unit to a first group of the memory cells;
read the data unit from the first group using at least a read threshold to produce a first readout;
in response to detecting that reading the data unit has failed because at the time of reading the first group, the read threshold has fallen outside a range of read thresholds supported by the memory cells, due to a temperature difference between a time of programming the first group and a time of reading the first group, program a second different group of the memory cells;
after programming the second group, re-read the data unit from the first group using the at least read threshold to produce a second readout;
and
recover the data unit from the second readout.

6 more elements

A method for data storage, comprising:

in a memory system comprising a plurality of memory cells that store data by setting the memory cells to analog voltages representative of respective storage values,
programming a data unit to a first group of the memory cells;
reading the data unit from the first group using at least a read threshold to produce a first readout;
in response to detecting that reading the data unit has failed because, at the time of reading the first group, the read threshold has fallen outside a range of read thresholds supported by the memory cells, due to a temperature difference between a time of programming the first group and a time of reading the first group, programming a second different group of the memory cells;
after programming the second group, re-reading the data unit from the first group using the at least read threshold to produce a second readout;
and
recovering the data unit from the second readout.

4 more elements

Dependencies are inferred from the claim text.

Recovery from cross-temperature read failures by programming neighbor word lines

Life of this patent

Recovery from cross-temperature read failures by programming neighbor word lines

Life of this patent

Abstract

Claims18