Sensor unit including a decoupling structure and manufacturing method therefor
AssigneeRobert Bosch GmbH
InventorsJohannes Classen, Torsten Kramer, Hubert Benzel, Jens Frey, Daniel Christoph Meisel, Christoph Schelling
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Abstract
A sensor unit including a first semiconductor component and a second semiconductor component, the first semiconductor component including a first substrate and a sensor structure. The second semiconductor component includes a second substrate, the first and second semiconductor components being connected to each other with the aid of a wafer connection, the sensor unit having a decoupling structure, which is configured in such a way that the sensor structure is decoupled thermally and/or mechanically from the second semiconductor component.
Claims29
A sensor unit, comprising:
- a first semiconductor component, the first semiconductor component having a first substrate and a sensor structure;
- and
- a second semiconductor component having a second substrate, the first and second semiconductor components being connected to each other via a wafer connection;
- wherein the sensor unit includes a decoupling structure, which is configured so that the sensor structure is thermomechanically and/or mechanically decoupled from the second semiconductor component, and
- wherein the decoupling structure includes at least one diaphragm element, which spans a cavity in a layer structure of the first semiconductor component and is formed in the area over the wafer connection.
A method for making a sensor unit, the method comprising:
- providing a first semiconductor component including a first substrate and a sensor structure;
- providing a second semiconductor component including a second substrate;
- connecting the first and second semiconductor components to each other via a wafer connection to a sensor system;
- forming a decoupling structure for thermomechanical and/or mechanical decoupling of the sensor structure from the second semiconductor component;
- wherein the decoupling structure includes at least one diaphragm element, which spans a cavity in a layer structure of the first semiconductor component and is formed in the area over the wafer connection.
Dependencies are inferred from the claim text.