Connection arrangements for integrated lateral diffusion field effect transistors

A semiconductor device, comprising:

• a semiconductor substrate supporting an overlying active layer;
• a first lateral diffusion field effect transistor (LDFET) in the active layer and comprising a source, a drain, and a gate;
• a second LDFET in the active layer and comprising a source, a drain, and a gate;
• a common node electrically connected to the source of the first LDFET and the drain of the second LDFET;
• a first front-side contact over the active layer and electrically connected to a first one of:
• the drain of the first LDFET, the source of the second LDFET, and the common node;
• a second front-side contact over the active layer and electrically connected to a second one of:
• the drain of the first LDFET, the source of the second LDFET, and the common node;
• a substrate contact electrically connected to the semiconductor substrate and a third one of:
• the drain of the first LDFET, the source of the second LDFET, and the common node;
• and
• a buried dielectric layer between the semiconductor substrate and the active layer;
• wherein the substrate contact extends through the buried dielectric layer;
• wherein the substrate contact extends through the active layer;
• wherein each of the first front-side contact, the second front-side contact, and the substrate contact is electrically connected to a different respective one of the drain of the first LDFET, the source of the second LDFET, and the common node;
• and
• wherein the substrate contact comprises a first set of parallel substrate sub-contacts that are interleaved with a second set of parallel channel sub-contacts that are connected to one of the sources and drains of the first and second LDFETs, wherein the respective sub-contacts of the first and second sets extend to a surface above the active layer where they are alternately arranged in a row.

A method of fabricating a semiconductor device, comprising:

• in an active layer over a semiconductor substrate, forming a first lateral diffusion field effect transistor (LDFET) comprising a source, a drain, and a gate, and a second LDFET comprising a source, a drain, and a gate;
• electrically connecting the source of the first LDFET and the drain of the second LDFET to a common node;
• over the active layer, forming a first front-side contact and a second front-side contact;
• forming a substrate contact electrically connected to the semiconductor substrate;
• electrically connecting the first front-side contact to a first set of one or more perimeter package leads of a semiconductor package with a first electrically conductive clip;
• electrically connecting the second front-side contact to a second set of one or more perimeter package leads of the semiconductor package with a second electrically conductive clip;
• and
• electrically connecting the substrate contact to a paddle of the semiconductor package;
• wherein each of the first front-side contact, the second front-side contact, and the substrate contact is electrically connected to a different respective one of the drain of the first LDFET, the source of the second LDFET, and the common node.