Image capture device
OwnerTetsuo Hori, Hitoshi Masuya +1inventors
InventorsTetsuo Hori, Hitoshi Masuya, Hidenori Kenmotsu
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Abstract
An image capture device and an x-ray emitting device are introduced comprising an electron receiving construct and an electron emitting construct separated by a spacer. The electron receiving construct comprises a faceplate, an anode and an inward facing photoconductor. The electron emitting construct comprises: a backplate; a substrate; a cathode; a plurality of field emission type electron sources arranged in an array; a stratified resistive layer between the field emission type electron source and the cathode; a gate electrode; a focus structure and a gate electrode support structure configured to support the gate electrode at a required cathode-gate spacing from the cathode.
Claims20
An electron emitting construct operable to direct electrons to an electron receiving construct separated therefrom by at least one spacer situated such that an unobstructed inner gap is present between said electron receiving construct and said electron emitting construct, said electron emitting construct comprising:
- a backplate;
- a substrate;
- a cathode;
- a gate electrode;
- a plurality of field emission type electron sources arranged in an array, said field emission type electron sources configured to emit an electron beam towards said electron receiving construct;
- a stratified resistive layer situated between the array of field emission type electron sources and the cathode;
- wherein said stratified resistive layer comprises at least a proximal resistor stratum closest to said field emission type electron sources, and a distal resistor stratum further from said field emission type electron sources, said proximal resistor stratum comprising a first resistive material having a first characteristic resistivity, and said distal resistor stratum comprising a second resistive material having a second characteristic resistivity, said first characteristic resistivity being greater than said second characteristic resistivity, and wherein at least one resistor stratum comprises at least one silicon carbide crystal.
An electron emitting construct operable to direct electrons to an electron receiving construct separated therefrom by at least one spacer situated such that an unobstructed inner gap is present between said electron receiving construct and said electron emitting construct, said electron emitting construct comprising:
- a backplate;
- a substrate;
- a cathode;
- a gate electrode;
- a plurality of field emission type electron sources arranged in an array, said field emission type electron sources configured to emit an electron beam towards said electron receiving construct;
- a stratified resistive layer situated between the array of field emission type electron sources and the cathode;
- wherein said stratified resistive layer comprises at least a proximal resistor stratum closest to said field emission type electron sources, and a distal resistor stratum further from said field emission type electron sources, said proximal resistor stratum comprising a first resistive material having a first characteristic resistivity, and said distal resistor stratum comprising a second resistive material having a second characteristic resistivity, said first characteristic resistivity being greater than said second characteristic resistivity,
- said stratified resistive layer further comprises at least one intermediate resistor stratum between said proximal resistor stratum and said distal resistor stratum, said at least one intermediate resistor stratum comprising at least a third resistive material having a characteristic resistivity intermediate between said first characteristic resistivity and said second characteristic resistivity.
Dependencies are inferred from the claim text.