Thermoelectric element, method of manufacturing the same and semiconductor device including the same

A thermoelectric element comprising:

• a semiconductor substrate;
• a plurality of first semiconductor fin structures and a plurality of second semiconductor fin structures disposed on the semiconductor substrate, each of the first and second semiconductor fin structures extending in a first direction and protruding from the semiconductor substrate;
• a plurality of first semiconductor nanowires disposed on the first semiconductor fin structures, the first semiconductor nanowires including first impurities;
• a plurality of second semiconductor nanowires disposed on the second semiconductor fin structures, the second semiconductor nanowires including second impurities different from the first impurities;
• a first electrode connected to first ends of the first semiconductor nanowires and first ends of the second semiconductor nanowires;
• a second electrode connected to second ends of the first semiconductor nanowires;
• a third electrode connected to second ends of the second semiconductor nanowires;
• and
• a first well region positioned under the second semiconductor fin structures,
• wherein each of the first well region and the second semiconductor fin structures includes the first impurities, and
• wherein each of the semiconductor substrate and the first semiconductor fin structures include the second impurities.

A thermoelectric element comprising:

• a semiconductor substrate;
• a plurality of first semiconductor fin structures and a plurality of second semiconductor fin structures disposed on the semiconductor substrate, each of the first and second semiconductor fin structures extending in a first direction and protruding from the semiconductor substrate;
• a plurality of first semiconductor nanowires disposed on the first semiconductor fin structures, the first semiconductor nanowires including first impurities;
• a plurality of second semiconductor nanowires disposed on the second semiconductor fin structures, the second semiconductor nanowires including second impurities different from the first impurities;
• a first electrode connected to first ends of the first semiconductor nanowires and first ends of the second semiconductor nanowires;
• a second electrode connected to second ends of the first semiconductor nanowires;
• a third electrode connected to second ends of the second semiconductor nanowires;
• and
• a first well region positioned under the second semiconductor fin structure, wherein the first well region is formed in the semiconductor substrate,
• wherein a doping density of the first semiconductor nanowires is higher than a doping density of the first well region and a doping density of the second semiconductor fin structures, and
• wherein a doping density of the second semiconductor nanowires is higher than a doping density of the semiconductor substrate and a doping density of the first semiconductor fin structures.