III-N semiconductor layer on Si substrate
AssigneeTranslucent, Inc.
InventorsRytis Dargis, Andrew Clark, Nam Pham, Erdem Arkun
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Abstract
A method of growing III-N semiconducting material on a silicon substrate including the steps of growing a layer of epitaxial rare earth oxide on a single crystal silicon substrate and modifying the surface of the layer of epitaxial rare earth oxide with nitrogen plasma. The method further includes the steps of growing a layer of low temperature epitaxial gallium nitride on the modified surface of the layer of epitaxial rare earth oxide and growing a layer of bulk epitaxial III-N semiconductive material on the layer of low temperature epitaxial gallium nitride.
Claims5
III-N semiconducting material on a silicon substrate comprising:
- a single crystal silicon substrate;
- a first epitaxial layer of rare earth oxide positioned on the silicon substrate, the first layer of rare earth oxide being substantially lattice matched to the silicon substrate;
- a second epitaxial layer of rare earth oxide positioned on the first epitaxial layer of rare earth oxide, the second epitaxial layer of rare earth oxide having a different lattice constant than the first epitaxial layer of rare earth oxide with a stress in the second epitaxial layer of rare earth oxide;
- the second layer of epitaxial rare earth oxide being nitridized with nitrogen to form a nucleation layer;
- and
- an epitaxial layer of III-N material positioned on the nucleation layer of epitaxial rare earth oxide.
III-N semiconducting material on a silicon substrate comprising:
- a single crystal silicon substrate;
- a single crystal layer of rare earth oxide positioned on the silicon substrate and having a surface;
- the surface of the single crystal layer of rare earth oxide being terminated with nitrogen atoms forming a nitrogen atom template;
- a single crystal layer of III-N material positioned on the nitrogen atom template;
- and
- a single crystal epitaxial bulk semiconductor III-N layer positioned on the single crystal layer of III-N material.
Dependencies are inferred from the claim text.