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US 9,915,966 B2Granted
Bandgap reference and related method
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChung-Cheng Chou, Yue-Der Chih
Life of this patent
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Abstract
A device includes a proportional-to-absolute-temperature (PTAT) current source having a bandgap reference voltage node, and a negative temperature dynamic load having an input terminal electrically connected to the bandgap reference voltage node.
Claims20
A device comprising:
- a proportional-to-absolute-temperature (PTAT) current source comprising:
- an amplifier having an output terminal;
- a first transistor configured to be operated in a subthreshold region, and electrically connected to an inverting input terminal of the amplifier;
- a second transistor configured to be operated in the subthreshold region, and electrically connected to a non-inverting input terminal of the amplifier, and the first transistor, wherein the first transistor and the second transistor share a common gate connected to the inverting input terminal of the amplifier;
- and
- a resistor having a first terminal electrically connected to the second transistor, and a second terminal electrically connected to a first power supply node;
- and
- a negative temperature dynamic load contributing a negative temperature correlation to the voltage of a bandgap reference voltage output node, the negative temperature dynamic load having a single input terminal and a single output terminal, the negative temperature dynamic load including a first load transistor, wherein the first load transistor is an N-type metal-oxide-semiconductor (NMOS) transistor having a first terminal directly connected to the first power supply node, the negative temperature dynamic load having a second load transistor having a gate terminal directly connected to the output of the amplifier and having a first terminal directly connected to a second power supply node, wherein a gate electrode of the first load transistor is electrically connected to a drain electrode of the second load transistor, wherein a drain electrode of the first load transistor is electrically connected to the drain electrode of the second load transistor, wherein a second terminal of the first load transistor and a second terminal of the second load transistor are directly connected together at the bandgap reference voltage output node, wherein the single input terminal is directly connected to the gate terminal of the second load transistor and the single output terminal is directly connected to the bandgap reference voltage output node.
5 more elements
A method comprising:
- (a) operating N-type transistors of a bandgap circuit in a subthreshold region, wherein the N-type transistors are connected in a common gate configuration, the common gate being connected to an inverting input of an amplifier;
- (b) generating proportional-to-absolute-temperature (PTAT) current in the bandgap circuit;
- (c) mirroring the PTAT current to a negative temperature dynamic load;
- and
- (d) generating a bandgap reference voltage at a common node between a first load transistor and a second load transistor in the negative temperature dynamic load, the first load transistor having a first terminal directly connected to a first power supply node, the negative temperature dynamic load having a second load transistor having a gate terminal directly connected to an output of the bandgap circuit and having a first terminal directly connected to a second power supply node.
2 more elements
A device comprising:
- a current source circuit configured to generate a proportional-to-absolute-temperature (PTAT) current, comprising:
- a first transistor configured to be operated in a subthreshold region, comprising:
- a control terminal;
- a first output terminal coupled to a first DC voltage reference;
- and
- a second output terminal coupled to the control terminal and an inverting input of an amplifier;
- a second transistor configured to be operated in a subthreshold region, comprising:
- a control terminal coupled to the control terminal of the first transistor;
- a first output terminal coupled to the first DC voltage reference through a passive resistive element;
- and
- a second output terminal coupled to the noninverting input of the amplifier;
- a negative temperature load circuit configured to provide a bandgap reference voltage, comprising:
- an input terminal coupled to the output terminal of the amplifier of the current source circuit;
- an input transistor configured to mirror the PTAT current, the input transistor comprising:
- a control terminal coupled to the input terminal;
- a first output terminal coupled to a second DC voltage reference;
- and
- a second output terminal directly coupled to a first output terminal of a first diode-connected transistor and a first output terminal of a second diode-connected transistor, wherein the bandgap reference voltage is provided at a common node directly coupled to the second output terminal of the input transistor and directly coupled to the first output terminal of the first diode-connected transistor and the first output terminal of the second diode-connected transistor.
15 more elements
Dependencies are inferred from the claim text.