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US 9,912,313 B2Granted
Method of manufacturing an encapsulation device
AssigneeMicro Crystal AG
InventorsLéa Deillon, Silvio Dalla Piazza, Thierry Hessler
Life of this patent
Estimating the term…
Abstract
An element is arranged to cooperate with another part so as to form an encapsulation device for a component including the element at least partially coated with a metallization. The metallization includes at least one metal layer protected by an intermetallic compound which is coated by a non-diffused portion of a material whose melting point is lower than 250° C. A method of fabricating the encapsulation device is also disclosed.
Claims14
A method for fabricating an encapsulation device for a micro-electromechanical system, the method comprising:
- forming the micro-electromechanical system including a main portion forming a cavity and a cover;
- depositing, on the main portion and the cover, a first and a second metallizations respectively including at least a first metal protected by a first anti-oxidation material, and at least a second metal protected by a second anti-oxidation material;
- depositing a layer of a material whose melting point is lower than 250° C. on solely the first metallization;
- partially diffusing the material whose melting point is lower than 250° C. in solely the first anti-oxidation material in order to entirely transform said first anti-oxidation material into an intermetallic compound formed of said first anti-oxidation material and of said material whose melting point is lower than 250° C. in order to protect the first metal, and to leave a portion of the material whose melting point is lower than 250° C. and which has not been partially diffused;
- mounting the micro-electromechanical system in the cavity of the main portion;
- assembling the portion of the material whose melting point is lower than 250° C. which has not been partially diffused in the partially diffusing against the second metallization;
- and
- totally diffusing the portion of material whose melting point is lower than 250° C. which has not been partially diffused in the partially diffusing in the second metallization in order to entirely transform the portion of material whose melting point is lower than 250° C. which has not been partially diffused in the partially diffusing into a second intermetallic compound formed by the second anti-oxidation material, the material whose melting point is lower than 250° C. and the second metal, so as to hermetically close the micro-electromechanical system inside the encapsulation device.
5 more elements
A method for fabricating an encapsulation device for a micro-electromechanical system, the method comprising:
- forming the micro-electromechanical system including a main portion forming a cavity and a cover;
- depositing, on the main portion and the cover, a first and a second metallizations respectively including at least a first metal protected by a first anti-oxidation material, and at least a second metal protected by a second anti-oxidation material;
- depositing a layer of a material whose melting point is lower than 250° C. on solely the second metallization;
- partially diffusing the material whose melting point is lower than 250° C. in solely the second anti-oxidation material in order to entirely transform said second anti-oxidation material into an intermetallic compound formed of said second anti-oxidation material and of said material whose melting point is lower than 250° C. in order to protect the second metal, and to leave a portion of the material whose melting point is lower than 250° C. and which has not been partially diffused;
- mounting the micro-electromechanical system in the cavity of the main portion;
- assembling the portion of the material whose melting point is lower than 250° C. which has not been partially diffused in the partially diffusing against first metallization;
- and
- totally diffusing the portion of material whose melting point is lower than 250° C. which has not been partially diffused in the partially diffusing in the first metallization in order to entirely transform the portion of material whose melting point is lower than 250° C. which has not been partially diffused in the partially diffusing into a first intermetallic compound formed by the first anti-oxidation material, the material whose melting point is lower than 250° C. and the first metal, so as to hermetically close the micro-electromechanical system inside the encapsulation device.
5 more elements
Dependencies are inferred from the claim text.